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General information
ABB 3BHE006412R0101
IGBT (InsulatedGateBipolarTransistor), insulated gate bipolar transistor, is a composite fully controlled
voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor),
and has high input of MOSFET Both the impedance and the low turn-on voltage drop of the GTR. The GTR saturation voltage
is reduced, the current carrying density is large, but the driving current is large; the MOSFET driving power is small, t
he switching speed is fast, but the conduction voltage drop is large, and the current carrying density is small.
For your reference
Minimum order quantity: 1 piece
Type of payment: 100% Payment in Advance
Warranty: one year
Courier partners: DHL, UPS, TNT, FedEx and EMS
Lead time: 2-3 working days
Technical specification, manuals and data sheets: Available on request
To get our best price & fast quotation, pls send us e-mail now.
Automation news
At the same time, the attraction of the industry has been greatly enhanced, and more enterprises will
join in the industry competition. It is predicted that the total output value of industrial automation in China
will exceed 570 billion yuan in 2022.
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About us
MOORE AUTOMATION LIMITED focuse on control systems, from legacy to leading edge.
We have a large inventory of high quality, surplus control system parts. We also distribute many new hardware
and software products to help supporting your existing control systems or utilize the latest control technology.
We have experienced staff, extensive test facilities and we can provide 1-year warranty for all of our surplus parts.
Adequate stock, fast delivery time!!
Email:miya@mvme.cn
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