ASM 02-43059 REV CP Signal Control Box

Product Details

Low-side gate driver output. Connect this pin to the gate of the low-side N-channel MOSFET. When VIN

bias is removed, an internal 200-kΩ resistor pulls LDRV to PGND.

Power ground of the IC. Connect this pin to the source of the low-side MOSFET. PGND should be

connected to AGND via a single point on the PCB.

Output of an internal LDO and power supply for internal control circuits and gate drivers. VCC is typically

7.5 V for the TPS43060 and 5.5 V for the TPS43061. Connect a low-ESR ceramic capacitor from this pin

to PGND. TI recommends a capacitance range from 0.47 to 10 µF.

Bootstrap capacitor node for high-side MOSFET gate driver. Connect the bootstrap capacitor from this pin

to the SW pin.

Switching node of the boost converter. Connect this pin to the junction of the drain of the low-side MOSFET,

the source of high-side synchronous MOSFET, and the inductor.

High-side gate driver output. Connect this pin to the gate of the high-side synchronous rectifier MOSFET.

When VIN bias is removed, this pin is connected to SW through an internal 200-kΩ resistor.

Power good indicator. This pin is an open-drain output. TI recommends a 10-kΩ pullup resistor between

PGOOD and VCC or an external logic supply pin.

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