General Description:
The product utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Features:
● 60V/50A, RDS(ON) =14mΩ@VGS=10V(typical)
● Fast switching and reverse body recovery
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Application:
● Power Switching application
● Synchronous rectification
● Motor drive for 12V-24V Systems
PIN Description:
Absolute Maximum Ratings(Tc=25℃ Unless Otherwise Noted):
Symbol | Parameter | Rating | Unit | |
VDS | Drain-Source Voltage | 60 | V | |
VGS | Gate-Source Voltage | ±20 | V | |
ID | Continuous Drain Current | Tc=25℃ | 50 | A |
Tc=100℃ | 35 | |||
IDM | Pulsed Drain Current | 185 | A | |
PD | Maximum Power Dissipation | 65 | W | |
TJTSTG | Operating Junction and Storage Temperature Range | -55~+175 | ℃ | |
RΘJC | Thermal Resistance-Junction to Case | 2.3 | ℃/W |
DFN5*6 Package Outline:
Symbol | Common | |||
mm | inch | |||
Min. | Max. | Min. | Max. | |
A | 1.03 | 1.17 | 0.0406 | 0.0461 |
b | 0.34 | 0.48 | 0.0134 | 0.0189 |
c | 0.203 BSC | 0.0080 BSC | ||
D | 4.80 | 5.40 | 0.1890 | 0.2126 |
D1 | 4.80 | 5.00 | 0.1890 | 0.1969 |
D2 | 4.11 | 4.31 | 0.1620 | 0.1700 |
D3 | 1.60 | 1.80 | 0.0629 | 0.0708 |
E | 5.95 | 6.15 | 0.2343 | 0.2421 |
E1 | 5.65 | 5.85 | 0.2224 | 0.2303 |
E2 | 3.30 | 3.50 | 0.1300 | 0.1378 |
E3 | 1.70 | / | 0.0630 | / |
e | 1.27 BSC | 0.05 BSC | ||
L | 0.05 | 0.25 | 0.0019 | 0.0098 |
L1 | 0.38 | 0.50 | 0.0150 | 0.0197 |
L2 | 0.38 | 0.50 | 0.0150 | 0.0197 |
i | / | 0.18 | / | 0.0070 |
k | 0.5 | 0.7 | 0.0197 | 0.0276 |
For more products information, please contact with us via email: ivanzhu@junqitrading.com