JUYI 500V/8A N Channel Enhancement Mode Power MOSFET with Fast switching and reverse body recovery
GENERAL DESCRIPTION
The product utilizes the advanced planar processing techniques to achieve the highcell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
FEATURES
● 500V/8A, RDS(ON) =0.75Ω@VGS=10V(Typical)
● Fast switching and reverse body recovery
● Excellent package for good heat dissipation
APPLICATIONS
● Lighting
● High efficiency switch mode power supplies
PIN DESCRIPTION
Absolute Maximum Ratings(Tc=25ºC Unless Otherwise Noted)
Symbol | Parameter | Limit | Unit |
VDS | Drain-Source Voltage | 500 | V |
VGS | Gate-Source Voltage | ±30 | V |
ID | Continuous Drain Current | Tc=25ºC | 8 | A |
Tc=100ºC | 4.8 |
IDM | Pulsed Drain Current | 30 | A |
PD | Maximum Power Dissipation | 80 | W |
TJ TSTG | Operating Junction and Storage Temperature Range | -55+150 | ºC |
RθJC | Thermal Resistance-Junction to Case | 1.56 | ℃/W |
Electrical Characteristics(Tc=25ºC Unless Otherwise Noted)
Electrical Characteristics(Ta=25ºC Unless Otherwise Noted)

