JUYI 500V/8A N Channel Enhancement Mode Power MOSFET
Symbol | Parameter | Limit | Unit | |
VDS | Drain-Source Voltage | 500 | V | |
VGS | Gate-Source Voltage | ±30 | V | |
ID | Continuous Drain Current | Tc=25ºC | 8 | A |
Tc=100ºC | 4.8 | |||
IDM | Pulsed Drain Current | 30 | A | |
PD | Maximum Power Dissipation | 80 | W | |
TJ TSTG | Operating Junction and Storage Temperature Range | -55+150 | ºC | |
RθJC | Thermal Resistance-Junction to Case | 1.56 | ℃/W |