JY11M N Channel Enhancement Mode Power MOSFET
GENERAL DESCRIPTION
The JY11M utilizes the latest trench processing techniques to achieve the high cell
density and reduces the on-resistance with high repetitive avalanche rating. These
features combine to make this design an extremely efficient and reliable device for
use in power switching application and a wide variety of other applications.
FEATURES
● 100V/110A, RDS(ON) =6.5mΩ@VGS=10V
● Fast switching and reverse body recovery
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
APPLICATIONS
● Switching application
● Hard switched and high frequency circuits
● Power Management for Inverter Systems
Absolute Maximum Ratings(Tc=25ºC Unless Otherwise Noted)
Symbol | Parameter | Limit | Unit | |
VDS | Drain-Source Voltage | 100 | V | |
VGS | Gate-Source Voltage | ± 20 | V | |
ID | Continuous Drain Current | Tc=25ºC | 110 | A |
Tc=100ºC | 82 | |||
IDM | Pulsed Drain Current | 395 | A | |
PD | Maximum Power Dissipation | 210 | W | |
TJ TSTG | Operating Junction and Storage Temperature Range | -55 to +175 | ºC | |
RθJC | Thermal Resistance-Junction to Case | 0.65 | ºC/W | |
RθJA | Thermal Resistance-Junction to Ambient | 62 |
Electrical Characteristics(Ta=25ºC Unless Otherwise Noted)
Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
Static Characteristics | ||||||
BVDSS | Drain-Source Breakdown Voltage | VGS=0V,IDS=250uA | 100 | V | ||
IDSS | Zero Gate Voltage Drain Current | VDS=100V,VGS=0V | 1 | uA | ||
IGSS | Gate-Body Leakage Current | VGS=± 20V,VDS=0V | ± 100 | nA | ||
VGS(th) | Gate Threshold Voltage | VDS= VGS, IDS=250uA | 2.0 | 3.0 | 4.0 | V |
RDS(ON) | Drain-Source On-state Resistance | VGS=10V,IDS=40A | 6.5 | mΩ | ||
gFS | Forward Transconductance | VDS=50V, IDS=40A | 100 | S |
DOWNLOAD JY11M USER MANUAL