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FLM0910-25F X- Band High Power RF Transistor FET 93.7W High Performance
FLM0910-25F X- Band High Power RF Transistor FET 93.7W High Performance
FLM0910-25F X- Band High Power RF Transistor FET 93.7W High Performance
FLM0910-25F X- Band High Power RF Transistor FET 93.7W High Performance
Specifications
Brand Name :
Fuji Electric
Model Number :
FLM0910-25F
Certification :
IEC
Place of Origin :
JP
MOQ :
1 piece
Price :
negotiable
Payment Terms :
T/T, Western Union, Paypal
Supply Ability :
10000 pieces per year
Delivery Time :
1-2 working days
Packaging Details :
factory standard packing
Drain-Source  Voltage :
15V
Gate-Source  Voltage :
-5V
Total  Power Dissipation :
93.7W
Storage Temperature :
-65 to +175℃
Channel Temperature :
175℃
Max Drain Current :
16.2A
Description

FLM0910-25F RF Power Transistor X-Band Internally Matched FET

DESCRIPTION

The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to provide optimum power and gain in a 50Ωsystem


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FLM0910-25F X- Band High Power RF Transistor FET 93.7W High Performance

Product tags

rf high power transistor

,

high power rf transistor

,

mosfet rf
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FLM0910-25F X- Band High Power RF Transistor FET 93.7W High Performance

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Product Detail
Brand Name :
Fuji Electric
Model Number :
FLM0910-25F
Certification :
IEC
Place of Origin :
JP
MOQ :
1 piece
Price :
negotiable
Contact Supplier
FLM0910-25F X- Band High Power RF Transistor FET 93.7W High Performance
FLM0910-25F X- Band High Power RF Transistor FET 93.7W High Performance

Shenzhen Koben Electronics Co., Ltd.

Site Member
8 Years
guangdong, shenzhen
Since 1995
Business Type :
Distributor/Wholesaler
Main Products :
Integrated Circuit IC Chip, Programmable IC Chip, Electronic IC Chip
Certification Level :
Site Member
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