Specifications
Brand Name :
Mitsubishi
Model Number :
RD100HHF1
Certification :
IEC
Place of Origin :
JP
MOQ :
1 piece
Price :
negotiable
Payment Terms :
T/T, Western Union, Paypal
Supply Ability :
10000 pieces per year
Delivery Time :
1-2 working days
Packaging Details :
factory standard packing
Drain to source voltage :
50V
Gate to source voltage :
20V
Channel dissipation :
176.5W
Input power :
12.5W
Drain current :
25A
Storage temperature :
-40 to +175°C
Description

RD100HHF1 MOSFET type transistor specifically designed for HF High power amplifiers applications

FEATURES

• High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz

• High Efficiency: 60%typ.on HF Band

APPLICATION

For output stage of high power amplifiers in HF Band mobile radio sets.

RD100HHF1 25A 12.5W Mosfet Power Transistor For HF High Power Amplifiers

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RD100HHF1 25A 12.5W Mosfet Power Transistor For HF High Power Amplifiers

Ask Latest Price
Brand Name :
Mitsubishi
Model Number :
RD100HHF1
Certification :
IEC
Place of Origin :
JP
MOQ :
1 piece
Price :
negotiable
Contact Supplier
RD100HHF1 25A 12.5W Mosfet Power Transistor For HF High Power Amplifiers

Shenzhen Koben Electronics Co., Ltd.

Site Member
8 Years
guangdong, shenzhen
Since 1995
Business Type :
Distributor/Wholesaler
Certification Level :
Site Member
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