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MRF151G RF N Channel Transistor Broadband Replacement For BLF278
MRF151G RF N Channel Transistor Broadband Replacement For BLF278
Specifications
Brand Name :
MA-COM
Model Number :
MRF151G
Certification :
IEC
Place of Origin :
USA
MOQ :
1 piece
Price :
negotiable
Payment Terms :
T/T, Western Union, Paypal
Supply Ability :
10000 pieces per year
Delivery Time :
1-2 working days
Packaging Details :
factory standard packing
Drain Source Voltage :
125Vdc
Drain Gate Voltage :
125Vdc
Gate Source Voltage :
±40Vdc
Drain Current :
40Adc
Power Dissipation :
500W
feature :
high Efficiency
Description

MRF151G RF Power Field-Effect Transistor 500W, 50V, 175MHz N-Channel Broadband MOSFET replacement for BLF278

Features

1, Guaranteed Performance at 175 MHz, 50 V

2, Output Power — 300 W • Gain — 14 dB (16 dB Typ)

3, Efficiency — 50% • Low Thermal Resistance — 0.35°C/W

4, Ruggedness Tested at Rated Output Power

5, Nitride Passivated Die for Enhanced Reliability

Description and Applications

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

MRF151G RF N Channel Transistor Broadband Replacement For BLF278

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Product tags

rf amplifier modules au3011p

,

rf module 433mhz datasheet

,

nrf24l01 rf module
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MRF151G RF N Channel Transistor Broadband Replacement For BLF278

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Product Detail
Brand Name :
MA-COM
Model Number :
MRF151G
Certification :
IEC
Place of Origin :
USA
MOQ :
1 piece
Price :
negotiable
Contact Supplier
MRF151G RF N Channel Transistor Broadband Replacement For BLF278

Shenzhen Koben Electronics Co., Ltd.

Site Member
8 Years
guangdong, shenzhen
Since 1995
Business Type :
Distributor/Wholesaler
Main Products :
Integrated Circuit IC Chip, Programmable IC Chip, Electronic IC Chip
Certification Level :
Site Member
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