Specifications
Brand Name :
Mitsubishi
Model Number :
RD06HVF1
Certification :
CE
Place of Origin :
CN
MOQ :
50 pieces
Price :
negotiable
Payment Terms :
T/T, Western Union, Paypal
Supply Ability :
10Kpcs per year
Delivery Time :
1-2 working days
Packaging Details :
plastic tube
Goods Condition :
Brand New
Part Status :
Active
Lead Free / Rohs :
Complaint
Function :
amp
Mounting Type :
throught hole
Package :
TO220
Description

RD06HVF1 RF POWER MOSFET Silicon Transistor 175MHz 6W for amplifiers applications

Description of RD06HVF1

RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications

FEATURES of RD06HVF1

High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz

APPLICATION of RD06HVF1

For output stage of high power amplifiers in VHF band mobile radio sets.

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RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers

Ask Latest Price
Brand Name :
Mitsubishi
Model Number :
RD06HVF1
Certification :
CE
Place of Origin :
CN
MOQ :
50 pieces
Price :
negotiable
Contact Supplier
RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers
RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers
RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers

Shenzhen Koben Electronics Co., Ltd.

Site Member
8 Years
guangdong, shenzhen
Since 1995
Business Type :
Distributor/Wholesaler
Certification Level :
Site Member
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