Specifications
Model Number :
BLF174XR
Certification :
IEC
Place of Origin :
USA
MOQ :
1 piece
Price :
negotiable
Payment Terms :
T/T, Western Union, Paypal
Supply Ability :
10000 pieces per year
Delivery Time :
1-2 working days
Packaging Details :
factory standard packing
Condition :
100% Brand New Product
Part Status :
Active
Package :
SOT1214A
Lead Free Status / RoHS Status :
Compliant
Output Power :
600W
Voltage :
50V
Description

BLF174XR RF Mosfet LDMOS (Dual), Common Source 50V 100mA 108MHz 28.5dB 600W SOT1214A

600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band

Feature

1, Easy power control

2, Integrated ESD protection

3, Excellent ruggedness

4, High efficiency

5, Excellent thermal stability

6, Designed for broadband operation (HF to 128 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Application

Industrial, scientific and medical applications

Broadcast transmitter applications

Transistor Type LDMOS (Dual), Common Source
Frequency 108MHz
Gain 28.5dB
Voltage - Test 50V
Current Rating -
Noise Figure -
Current - Test 100mA
Power - Output 600W
Voltage - Rated 110V
Package / Case SOT-1214A
Supplier Device Package SOT1214A

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High Efficiency Mosfet Power Transistor 28.5dB 108MHz BLF174XR RF

Ask Latest Price
Model Number :
BLF174XR
Certification :
IEC
Place of Origin :
USA
MOQ :
1 piece
Price :
negotiable
Payment Terms :
T/T, Western Union, Paypal
Contact Supplier
High Efficiency Mosfet Power Transistor 28.5dB 108MHz BLF174XR RF
High Efficiency Mosfet Power Transistor 28.5dB 108MHz BLF174XR RF

Shenzhen Koben Electronics Co., Ltd.

Site Member
8 Years
guangdong, shenzhen
Since 1995
Business Type :
Distributor/Wholesaler
Certification Level :
Site Member
Contact Supplier
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