Specifications
Brand Name :
ST Microelectronics
Model Number :
STM32F051K6U6
Certification :
ROHS
Place of Origin :
CHINA
MOQ :
50pcs
Price :
negotiate
Payment Terms :
Western Union, T/T,Paypal
Supply Ability :
Consultation
Delivery Time :
2-3 working days
Packaging Details :
50PCS/Standard Package
FET Type :
N-Channel
Drain to Source Voltage :
60V
Drive Voltage :
10V
Operating Temperature :
-55°C ~ 175°C
Description

STP65NF06 N-Channel Power MOSFET 60V 60A 110W (Tc) Through Hole Switching application

Description

This Power MOSFET is the latest development of STMicroelectronics unique “single feature size”™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 25V
FET Feature -
Power Dissipation (Max) 110W (Tc)
Operating Temperature -55°C ~ 175°C

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Through Hole Switching Integrated Circuit IC Chip , N Channel Power MOSFET 110 Watt

Ask Latest Price
Brand Name :
ST Microelectronics
Model Number :
STM32F051K6U6
Certification :
ROHS
Place of Origin :
CHINA
MOQ :
50pcs
Price :
negotiate
Contact Supplier
Through Hole Switching Integrated Circuit IC Chip , N Channel Power MOSFET 110 Watt
Through Hole Switching Integrated Circuit IC Chip , N Channel Power MOSFET 110 Watt

Shenzhen Koben Electronics Co., Ltd.

Site Member
8 Years
guangdong, shenzhen
Since 1995
Business Type :
Distributor/Wholesaler
Certification Level :
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