MachineU > China Products > Chemicals > Inorganic Chemicals > Non-Metallic Products > Ceramics
Size customized 0.32mm thickness Silicon Nitride Substrates For IGBT And SiC MOSFET
Size customized 0.32mm thickness Silicon Nitride Substrates For IGBT And SiC MOSFET
Size customized 0.32mm thickness Silicon Nitride Substrates For IGBT And SiC MOSFET
Size customized 0.32mm thickness Silicon Nitride Substrates For IGBT And SiC MOSFET
Specifications
Brand Name :
Cersol
Place of Origin :
China
Payment Terms :
T/T IN ADVANCE
Delivery Time :
USUALLY 1 MONTH
Packaging Details :
BAGS, BARRELS, CARTONS
Material :
siliocn nitride
Color :
black
Application :
IGBT
Description

Description

Silicon nitride ceramics have many excellent performances such as high hardness, high strength, small thermal expansion coefficient, small high temperature creep, good antioxidant performance, good thermal corrosion performance, and small friction coefficients. It is the best ceramic material in comprehensive performance. It is widely used in the fields of aerospace, high -speed rail, and new energy vehicles. It is an important core heat dissipation material for insulation grid bipolar crystal pipes (IGBT) and silicon carbide power module (SIC MOSFET).

Size customized 0.32mm thickness Silicon Nitride Substrates For IGBT And SiC MOSFET Size customized 0.32mm thickness Silicon Nitride Substrates For IGBT And SiC MOSFET

Features

  • High hardness,high strength
  • Good antioxidant performance
  • Good thermal corrosion performance
  • Small thermal expansion coefficient
  • Small high temperature creep
  • Small friction coefficients

Dimension

DimensionThicknessLength and Width
0.32mm114.3*114.3mm
138*190mm
Remarks: Customized according to customer requirements


Materials Properties

Materials PropertiesFormulaSi3N4
ColorGrey/ White
Density(g/cm3)≥3.20
Surface roughness Ra
(μm)		0.200-0.600
Flexural Strength
(MPa)		＞800
Camber
(Length‰)		≤3
Thermal Conductivity
(25℃,W/m·k)		＞80
Coefficient of thermal expansion
(10-6/K{40-400℃})		2.0-3.0
Coefficient of thermal expansion
(10-6/K{40-800℃})		2.0-3.0
Dielectric Constant≥17
Volume resistance≥1014








Product tags

t slot aluminium profiles

,

semiconductor design

,

t-slot aluminum profile
Send your message to this supplier
Send Now

Size customized 0.32mm thickness Silicon Nitride Substrates For IGBT And SiC MOSFET

Ask Latest Price
Product Detail
Brand Name :
Cersol
Place of Origin :
China
Payment Terms :
T/T IN ADVANCE
Delivery Time :
USUALLY 1 MONTH
Packaging Details :
BAGS, BARRELS, CARTONS
Material :
siliocn nitride
Contact Supplier
Size customized 0.32mm thickness Silicon Nitride Substrates For IGBT And SiC MOSFET
Size customized 0.32mm thickness Silicon Nitride Substrates For IGBT And SiC MOSFET

Zhuhai Cersol Technology Co, Ltd

Verified Supplier
4 Years
guangdong, zhuhai
Since 2020
Business Type :
Manufacturer, Exporter, Seller
Main Products :
Material Powder, Boron Nitride Products, Silicon Nitride Products
Total Annual :
500000-1000000
Employee Number :
10~50
Certification Level :
Verified Supplier
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products Silicon Nitride Products
MachineU China Products Chemicals Inorganic Chemicals Non-Metallic Products Ceramics
Contact Supplier
Submit Requirement