Amplifier IC Chips Infineon Technologies IRF5210PBF
ECAD Module | PCB Symbol, Footprint & 3D Model |
Country of Origin | China, Philippines |
Halogen Free | Compliant |
Estimated EOL Date | 2024 |
Is this a common-used part? | Yes |
Popularity | High |
Fake Threat In the Open Market | 42 pct. |
Supply and Demand Status | Sufficient |
Alternative Parts (Cross-Reference) |
IXTT50P10; |
ECCN | EAR99 |
Introduction Date | 30-Jan-04 |
Family Name | IRF5210 |
Case / Package | TO-220AB |
Mounting | Through Hole |
Temperature Range - Operating | -55°C to 175°C (TJ) |
Power Dissipation (Max) | 200W (Tc) |
Maximum Gate-Source Voltage | ±20V |
Maximum Rds On at Id,Vgs | 60 mOhm @ 24A, 10V |
Dimension | TO-220-3 |
Gate-Source Threshold Voltage | 4V @ 250μA |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Continuous Drain Current at 25°C | 40A (Tc) |
Technology | MOSFET |
Polarity | P-Channel |
Status | Active |
Packaging | Tube/Rail |
Manufacturer | Infineon Technologies |
Categories | Discrete Semiconductor Products |
Max Input Capacitance | 2700pF @ 25V |
Max Gate Charge | 180nC @ 10V |
Drain-Source Breakdown Voltage | 100V |