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DF200R12KE3HOSA1
DF200R12KE3HOSA1
Specifications
Category :
Discrete Semiconductor Products Transistors IGBTs IGBT Modules
Current - Collector Cutoff (Max) :
5 mA
Product Status :
Active
Mounting Type :
Chassis Mount
Package :
Tray
Series :
-
Vce(on) (Max) @ Vge, Ic :
2.15V @ 15V, 200A
Voltage - Collector Emitter Breakdown (Max) :
1200 V
Supplier Device Package :
Module
Mfr :
Infineon Technologies
Operating Temperature :
-40°C ~ 125°C
Power - Max :
1040 W
IGBT Type :
-
Package / Case :
Module
Input :
Standard
Input Capacitance (Cies) @ Vce :
14 nF @ 25 V
Configuration :
Single
NTC Thermistor :
No
Base Product Number :
DF200R12
Description :
IGBT MODULE 1200V 1040W
Stock :
In Stock
Shipping Method :
LCL, AIR, FCL, Express
Payment Terms :
L/C, D/A, D/P, T/T, Western Union,
Description
IGBT Module Single 1200 V 1040 W Chassis Mount Module
Product tags

DF2308

,

TLV431BIDCKR

,

DAF 1505035R
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DF200R12KE3HOSA1

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Product Detail
Category :
Discrete Semiconductor Products Transistors IGBTs IGBT Modules
Current - Collector Cutoff (Max) :
5 mA
Product Status :
Active
Mounting Type :
Chassis Mount
Package :
Tray
Series :
-
Contact Supplier
DF200R12KE3HOSA1

Beijing Silk Road Enterprise Management Services Co.,LTD

Verified Supplier
2 Years
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer, Exporter
Main Products :
Battery Chargers, Buffers & Line Drivers, Inverters
Employee Number :
100~120
Certification Level :
Verified Supplier
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