Specifications
Category :
Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors
Current - Collector (Ic) (Max) :
100 mA
Product Status :
Active
Transistor Type :
NPN - Pre-Biased
Mounting Type :
Surface Mount
Package :
Tape & Reel (TR)
Series :
-
Vce Saturation (Max) @ Ib, Ic :
300mV @ 500µA, 5mA
Voltage - Collector Emitter Breakdown (Max) :
50 V
Supplier Device Package :
VESM
Resistor - Base (R1) :
47 kOhms
Mfr :
Toshiba Semiconductor and Storage
Resistor - Emitter Base (R2) :
22 kOhms
Current - Collector Cutoff (Max) :
500nA
Power - Max :
150 mW
Package / Case :
SOT-723
DC Current Gain (hFE) (Min) @ Ic, Vce :
70 @ 10mA, 5V
Base Product Number :
RN1109
Description :
TRANS PREBIAS NPN 50V 0.1A VESM
Stock :
In Stock
Shipping Method :
LCL, AIR, FCL, Express
Payment Terms :
L/C, D/A, D/P, T/T, Western Union, MoneyGram
Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM
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RN1109MFV,L3F

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Category :
Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors
Current - Collector (Ic) (Max) :
100 mA
Product Status :
Active
Transistor Type :
NPN - Pre-Biased
Mounting Type :
Surface Mount
Package :
Tape & Reel (TR)
Contact Supplier
RN1109MFV,L3F

Beijing Silk Road Enterprise Management Services Co.,LTD

Verified Supplier
2 Years
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer, Exporter
Employee Number :
100~120
Certification Level :
Verified Supplier
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