2SK2700 electrical ic MOS Type Chopper Regulator , DC - DC Converter
Absolute Maximum Ratings (Ta = 25°C)
Characteristics | Symbol | Rating | Unit | |
Drain–source voltage | VDSS | 900 | V | |
Drain–gate voltage (RGS = 20 kΩ) | VDGR | 900 | V | |
Gate–source voltage | VGSS | ±30 | V | |
Drain current | DC (Note 1) | ID | 3 | A |
Pulse (Note 1) | IDP | 9 | A | |
Drain power dissipation (Tc = 25°C) | PD | 40 | W | |
Single pulse avalanche energy (Note 2) | EAS | 295 | mJ | |
Avalanche current | IAR | 3 | A | |
Repetitive avalanche energy (Note 3) | EAR | 4 | mJ | |
Channel temperature | Tch | 150 | °C | |
Storage temperature range | Tstg | −55~150 | °C |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics | Symbol | Max | Unit |
Thermal resistance, channel to case | Rth (ch–c) | 3.125 | °C / W |
Thermal resistance, channel to ambient | Rth (ch–a) | 62.5 | °C / W |
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 60.0 mH, RG = 25 Ω, IAR = 3 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Weight: 1.9 g (typ.)
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