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PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching
PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching
Specifications
Brand Name :
Anterwell
Model Number :
2SC5707
Certification :
new & original
Place of Origin :
original factory
MOQ :
20
Price :
Negotiate
Payment Terms :
T/T, Western Union,Paypal
Supply Ability :
9500
Delivery Time :
1 day
Packaging Details :
Please contact me for details
Collector Cutoff Current :
<= (--)0.1 µA
Emitter Cutoff Current :
<= (--)0.1 µA
DC Current Gain :
200-560
Gain-Bandwidth Product :
(290)330 MHz
Description

PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching

Applications

• DC / DC converter, relay drivers, lamp drivers, motor drivers, flash

Features

• Adoption of FBET and MBIT processes.

• Large current capacitance.

• Low collector-to-emitter saturation voltage.

• High-speed switching.

• High allowable power dissipation.

Specifications ( ) : 2SA2040

Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO -- (--50)100 V
Collector-to-Emitter Voltage VCES -- (--50)100 V
Collector-to-Emitter Voltage VCEO -- (--)50 V
Emitter-to-Base Voltage VEBO -- (--)6 V
Collector Current IC -- (--)8 A
Collector Current (Pulse) ICP -- (--)11 A
Base Current IB -- (--)2 A
Collector Dissipation PC

--

Tc=25°C

1.0

15

W

W
Junction Temperature Tj -- 150 °C
Storage Temperature Tstg -- --55 to +150 °C

Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions min. Typ. max. unit
Collector Cutoff Current ICBO VCB=(--)40V, IE=0A -- -- (--)0.1 µA
Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A -- -- (--)0.1 µA
DC Current Gain hFE VCE=(--)2V, IC=(--)500mA 200 -- 560 --
Gain-Bandwidth Product fT VCE=(--)10V, IC=(--)500mA -- (290)330 -- MHz
Output Capacitance Cob VCB=(--)10V, f=1MHz -- (50)28 -- pF
Collector-to-Emitter Saturation Voltage

VCE(sat)1

VCE(sat)2

IC=(--)3.5A, IB=(--)175mA

IC=(--)2A, IB=(--)40mA

--

--

(--230)160

(--240)110

(--390)240

(--400)170

mV

mV
Base-to-Emitterr Saturation Voltage VBE(sat) IC=(--)2A, IB=(--)40mA -- (--)0.83 (--)1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10µA, IE=0A (--50)100 -- -- V
Collector-to-Emitter Breakdown Voltage V(BR)CES IC=(--)100µA, RBE=0Ω (--50)100 -- -- V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞ (--)50 -- -- V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10µA, IC=0A (--)6 -- -- V
Turn-On Time ton See specified Test Circuit. -- (40)30 -- ns
Storage Time tstg See specified Test Circuit. -- (225)420 -- ns
Fall Time tf See specified Test Circuit. -- 25 -- ns

Package Dimensions Package Dimensions

unit : mm unit : mm

7518-003 7003-003

PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching

Switching Time Test Circuit

PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching

PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching

PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching

PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching

PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching

PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching

Product tags

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PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching

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Product Detail
Brand Name :
Anterwell
Model Number :
2SC5707
Certification :
new & original
Place of Origin :
original factory
MOQ :
20
Price :
Negotiate
Contact Supplier
PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching

Anterwell Technology Ltd.

Site Member
9 Years
guangdong, shenzhen
Since 2004
Business Type :
Distributor/Wholesaler, Trading Company
Main Products :
Integrated Circuit Chip, Programmable IC Chips, Circuit Board Chips
Total Annual :
500000-1000000
Employee Number :
20~30
Certification Level :
Site Member
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