Specifications
Brand Name :
TOSHIBA
Model Number :
30J127
Certification :
Original Factory Pack
Place of Origin :
Original
MOQ :
20pcs
Price :
Negotiation
Payment Terms :
T/T, Western Union,PayPal
Supply Ability :
5200PCS
Delivery Time :
1 Day
Packaging Details :
please contact me for details
VCES :
600 V
VGES :
±20 V
I C :
30 A
ICP :
60 A
Collector power dissipation (Tc = 25°C) :
170 W
Description

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT30J121

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT  Silicon N Channel IGBT High Power Switching  30J127

High Power Switching Applications

Fast Switching Applications

• The 4th generation

• Enhancement-mode

• Fast switching (FS):

Operating frequency up to 50 kHz (reference)

High speed: tf = 0.05 µs (typ.)

Low switching loss : Eon = 1.00 mJ (typ.)

: Eoff = 0.80 mJ (typ.)

• Low saturation voltage: VCE (sat) = 2.0 V (typ.)

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit
Collector-emitter voltage VCES 600 V
Gate-emitter voltage VGES ±20 V
Collector power dissipation (Tc = 25°C) PC 170 W
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C

Switching time measurement circuit and input/output waveforms

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT  Silicon N Channel IGBT High Power Switching  30J127

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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Silicon N Channel IGBT High Power Switching 30J127

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Brand Name :
TOSHIBA
Model Number :
30J127
Certification :
Original Factory Pack
Place of Origin :
Original
MOQ :
20pcs
Price :
Negotiation
Contact Supplier
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT  Silicon N Channel IGBT High Power Switching  30J127

Anterwell Technology Ltd.

Site Member
9 Years
guangdong, shenzhen
Since 2004
Business Type :
Distributor/Wholesaler, Trading Company
Total Annual :
500000-1000000
Employee Number :
20~30
Certification Level :
Site Member
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