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Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications 2SK2611
Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications 2SK2611
Specifications
Brand Name :
Anterwell
Model Number :
2SK2611
Certification :
new & original
Place of Origin :
original factory
MOQ :
20pcs
Price :
Negotiate
Payment Terms :
T/T, Western Union, Paypal
Supply Ability :
10000pcs
Delivery Time :
1 day
Packaging Details :
Please contact me for details
Drain−source voltage :
900 V
Drain−gate voltage (RGS = 20 kΩ) :
900 V
Gate−source voltage :
±30 V
Drain power dissipation (Tc = 25°C) :
150 W
Single pulse avalanche energy :
663 mJ
Avalanche current :
9 A
Channel temperature :
150 °C
Storage temperature range :
−55~150 °C
Description

TOSHIBA Field Effect Transistor

Silicon N Channel MOS Type (π−MOSIII) 2SK2611

DC−DC Converter, Relay Drive and Motor Drive Applications

* Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.)

* High forward transfer admittance : |Yfs| = 7.0 S (typ.)

* Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)

* Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications 2SK2611

Weight: 4.6 g (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit
Drain−source voltage VDSS 900 V
Drain−gate voltage (RGS = 20 kΩ) VDGR 900 V
Gate−source voltage VGSS ±30 V
Drain current DC (Note 1) ID 9 A
Pulse (Note 1) IDP 27 A
Drain power dissipation (Tc = 25°C) PD 150 W
Single pulse avalanche energy (Note 2) EAS 663 mJ
Avalanche current IAR 9 A
Repetitive avalanche energy (Note 3) EAR 15 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55~150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics Symbol Max Unit
Thermal resistance, channel to case Rth (ch−c) 0.833 °C / W
Thermal resistance, channel to ambient Rth (ch−a) 50 °C / W

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 2: VDD = 90 V, Tch = 25°C (initial), L = 15 mH, RG = 25 Ω, IAR = 9 A

Note 3: Repetitive rating: Pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device.

Please handle with caution.

Marking

Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications 2SK2611

Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications 2SK2611

Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications 2SK2611

Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications 2SK2611

Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications 2SK2611

Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications 2SK2611

Product tags

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Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications 2SK2611

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Product Detail
Brand Name :
Anterwell
Model Number :
2SK2611
Certification :
new & original
Place of Origin :
original factory
MOQ :
20pcs
Price :
Negotiate
Contact Supplier
Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications 2SK2611

Anterwell Technology Ltd.

Site Member
9 Years
guangdong, shenzhen
Since 2004
Business Type :
Distributor/Wholesaler, Trading Company
Main Products :
Integrated Circuit Chip, Programmable IC Chips, Circuit Board Chips
Total Annual :
500000-1000000
Employee Number :
20~30
Certification Level :
Site Member
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