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N - Channel Logic Level Enhancement Mode Field Effect Transistor P0903BDL
N - Channel Logic Level Enhancement Mode Field Effect Transistor P0903BDL
Specifications
Brand Name :
Original
Model Number :
P0903BDL
Certification :
Original Factory Pack
Place of Origin :
Original
MOQ :
5pcs
Price :
Negotiation
Payment Terms :
T/T, Western Union,PayPal
Supply Ability :
290PCS
Delivery Time :
1 Day
Packaging Details :
please contact me for details
Gate-Source Voltage :
20 V
Continuous Drain Current :
50 A
Pulsed Drain Current1 :
200 A
Operating Junction & Storage Temperature Range :
-55 to 150 °C
Lead Temperature (1 /16” from case for 10 sec.) :
275 °C
Description

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Continuous Current IS 50 A
Pulsed Current3 ISM 150
Forward Voltage1 VSD IS = 25A, VGS = 0V 0.9 1.3 V
Reverse Recovery Time trr IF = IS, dlF/dt = 100A / µS 70 nS
Peak Reverse Recovery Current IRM(REC) 200 A
Reverse Recovery Charge 0.043 µC

TYPICAL CHARACTERISTICS

N - Channel Logic Level Enhancement Mode Field Effect Transistor P0903BDL

Product tags

analog vlsi design

,

vlsi circuit design

,

cmos vlsi design
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N - Channel Logic Level Enhancement Mode Field Effect Transistor P0903BDL

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Product Detail
Brand Name :
Original
Model Number :
P0903BDL
Certification :
Original Factory Pack
Place of Origin :
Original
MOQ :
5pcs
Price :
Negotiation
Contact Supplier
N - Channel Logic Level Enhancement Mode Field Effect Transistor P0903BDL

Anterwell Technology Ltd.

Site Member
9 Years
guangdong, shenzhen
Since 2004
Business Type :
Distributor/Wholesaler, Trading Company
Main Products :
Integrated Circuit Chip, Programmable IC Chips, Circuit Board Chips
Total Annual :
500000-1000000
Employee Number :
20~30
Certification Level :
Site Member
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