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MJD112T4G high power mosfet transistors , Complementary Darlington Power Transistors
MJD112T4G high power mosfet transistors , Complementary Darlington Power Transistors
Specifications
Brand Name :
Anterwell
Model Number :
MJD112T4G
Certification :
new & original
Place of Origin :
original factory
MOQ :
10pcs
Price :
Negotiate
Payment Terms :
T/T, Western Union, Paypal
Supply Ability :
8600pcs
Delivery Time :
1 day
Packaging Details :
Please contact me for details
Collector−Emitter Voltage :
100 Vdc
Collector−Base Voltage :
100 Vdc
Emitter−Base Voltage :
5 Vdc
Base Current :
50 mAdc
Total Power Dissipation @ TC = 25°C :
20 W
Operating and Storage Junction Temperature Range :
−65 to +150 °C
Description

MJD112T4G high power mosfet transistors , Complementary Darlington Power Transistors

MJD112 (NPN)

MJD117 (PNP)

Complementary Darlington Power Transistors

DPAK For Surface Mount Applications

SILICON POWER TRANSISTORS

2 AMPERES

100 VOLTS

20 WATTS

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.

Features

• Pb−Free Packages are Available

• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

• Straight Lead Version in Plastic Sleeves (“−1” Suffix)

• Lead Formed Version in 16 mm Tape and Reel (“T4” and “RL” Suffix)

• Electrically Similar to Popular TIP31 and TIP32 Series

MAXIMUM RATINGS

Rating Symbol Max Unit
Collector−Emitter Voltage VCEO 100 Vdc
Collector−Base Voltage VCB 100 Vdc
Emitter−Base Voltage VEB 5 Vdc

Collector Current − Continuous

Peak

 IC

2

4

 Adc
Base Current IB 50 mAdc

Total Power Dissipation @ TC = 25°C

Derate above 25°C

 PD

20

0.16

W

W/°C

Total Power Dissipation* @ TA = 25°C

Derate above 25°C

 PD

1.75

0.014

W

W/°C
Operating and Storage Junction Temperature Range TJ, Tstg −65 to +150 °C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

MARKING DIAGRAMS

MJD112T4G high power mosfet transistors , Complementary Darlington Power Transistors

PACKAGE DIMENSIONS

DPAK

CASE 369C

ISSUE O

MJD112T4G high power mosfet transistors , Complementary Darlington Power Transistors

DPAK−3

CASE 369D−01

ISSUE B

MJD112T4G high power mosfet transistors , Complementary Darlington Power Transistors

Product tags

darlington power transistor types

,

darlington npn power transistor

,

best darlington transistors
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MJD112T4G high power mosfet transistors , Complementary Darlington Power Transistors

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Product Detail
Brand Name :
Anterwell
Model Number :
MJD112T4G
Certification :
new & original
Place of Origin :
original factory
MOQ :
10pcs
Price :
Negotiate
Contact Supplier
MJD112T4G high power mosfet transistors , Complementary Darlington Power Transistors

Anterwell Technology Ltd.

Site Member
9 Years
guangdong, shenzhen
Since 2004
Business Type :
Distributor/Wholesaler, Trading Company
Main Products :
Integrated Circuit Chip, Programmable IC Chips, Circuit Board Chips
Total Annual :
500000-1000000
Employee Number :
20~30
Certification Level :
Site Member
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