IS61LV25616AL

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

FEATURES

• High-speed access time:

— 10, 12 ns

• CMOS low power operation

• Low stand-by power:

— Less than 5 mA (typ.) CMOS stand-by

• TTL compatible interface levels

• Single 3.3V power supply

• Fully static operation: no clock or refresh required

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

• Lead-free available

DESCRIPTION

The ISSI IS61LV25616AL is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance andlow power consumption devices.

When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.

Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.

The IS61LV25616AL is packaged in the JEDEC standard 44-pin 400-mil SOJ, 44-pin TSOP Type II, 44-pin LQFP and 48-pin Mini BGA (8mm x 10mm).

ABSOLUTE MAXIMUM RATINGS⁽¹⁾

Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

OPERATING RANGE

FUNCTIONAL BLOCK DIAGRAM

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