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P4NK60ZFP Power Mosfet Transistor high power mosfet transistors
P4NK60ZFP Power Mosfet Transistor high power mosfet transistors
Specifications
Brand Name :
Anterwell
Model Number :
P4NK60ZFP
Certification :
new & original
Place of Origin :
original factory
MOQ :
10pcs
Price :
Negotiate
Payment Terms :
T/T, Western Union, Paypal
Supply Ability :
8760pcs
Delivery Time :
1 day
Packaging Details :
Please contact me for details
Drain-source Voltage :
600 V
Drain-gate Voltage :
600 V
Gate- source Voltage :
± 30 V
Peak Diode Recovery voltage slope :
4.5 V/ns
Insulation Withstand Voltage :
2500 V
Operating Junction Temperature :
-55 to 150 °C
Description

Stock Offer (Hot Sell)

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STP4NK60Z-STP4NK60ZFP-STB4NK60Z-1

STB4NK60Z-STD4NK60Z-STD4NK60Z-1

N-CHANNEL600V-1.76Ω-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK

Zener-Protected SuperMESH™Power MOSFET

■ TYPICAL RDS(on) = 1.76 Ω

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ GATE CHARGE MINIMIZED

■ VERY LOW INTRINSIC CAPACITANCES

■ VERY GOOD MANUFACTURING REPEATIBILITY

DESCRIPTION

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC

■ LIGHTING

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP4NK60Z

STB4NK60Z

STB4NK60Z-1

 STP4NK60ZFP

STD4NK60Z

STD4NK60Z-1
VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 600 V
VGS Gate- source Voltage ± 30 V
ID Drain Current (continuous) at TC = 25°C 4 4 (*) 4 A
ID Drain Current (continuous) at TC = 100°C 2.5 2.5 (*) 2.5 A
IDM (•) Drain Current (pulsed) 16 16 (*) 16 A
PTOT Total Dissipation at TC = 25°C 70 25 70 W
Derating Factor 0.56 0.2 0.56 W/°C
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ) 3000 V
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
VISO Insulation Withstand Voltage (DC) - 2500 - V

Tj

Tstg

Operating Junction Temperature

Storage Temperature

-55 to 150

-55 to 150

 °C

(•) Pulse width limited by safe operating area

(1) ISD ≤4A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(*) Limited only by maximum temperature allowed

P4NK60ZFP Power Mosfet Transistor high power mosfet transistors

Product tags

p55nfo power mosfet

,

2sa1535 pnp power transistor

,

mosfet power transistor com
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P4NK60ZFP Power Mosfet Transistor high power mosfet transistors

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Product Detail
Brand Name :
Anterwell
Model Number :
P4NK60ZFP
Certification :
new & original
Place of Origin :
original factory
MOQ :
10pcs
Price :
Negotiate
Contact Supplier
P4NK60ZFP Power Mosfet Transistor high power mosfet transistors

Anterwell Technology Ltd.

Site Member
9 Years
guangdong, shenzhen
Since 2004
Business Type :
Distributor/Wholesaler, Trading Company
Main Products :
Integrated Circuit Chip, Programmable IC Chips, Circuit Board Chips
Total Annual :
500000-1000000
Employee Number :
20~30
Certification Level :
Site Member
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