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RFP70N06 high power mosfet transistors Power Mosfet Transistor N-Channel Power MOSFETs
RFP70N06 high power mosfet transistors Power Mosfet Transistor N-Channel Power MOSFETs
Specifications
Brand Name :
Anterwell
Model Number :
RFP70N06
Certification :
new & original
Place of Origin :
original factory
MOQ :
10pcs
Price :
Negotiate
Payment Terms :
T/T, Western Union, Paypal
Supply Ability :
8300pcs
Delivery Time :
1 day
Packaging Details :
Please contact me for details
Drain to Source Voltage :
60 V
Drain to Gate Voltage (RGS = 20kΩ) :
60 V
Continuous Drain Current :
70 A
Gate to Source Voltage :
±20 V
Power Dissipation :
150 W
Linear Derating Factor :
1.0 W/℃
Description

RFG70N06, RFP70N06, RF1S70N06SM

70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.

Formerly developmental type TA49007.

Features

• 70A, 60V

• rDS(on) = 0.014Ω

• Temperature Compensated PSPICE® Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve (Single Pulse)

• 175oC Operating Temperature

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Absolute Maximum Ratings TC = 25℃, Unless Otherwise Specified

PARAMETER SYMBOL

RFG70N06, RFP70N06

RF1S70N06SM

 UNITS
Drain to Source Voltage (Note 1) VDSS 60 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) VDGR 60 V
Continuous Drain Current ID 70 A
Pulsed Drain Current (Note 3) IDM Refer to Peak Current Curve
Gate to Source Voltage VGS ±20 V
Single Pulse Avalanche Rating EAS Refer to UIS Curve A
Power Dissipation PD 150 W
Linear Derating Factor 1.0 W/℃
Operating and Storage Temperature TJ, TSTG -55 to 175 ℃

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s

Package Body for 10s, See Techbrief 334

TL

Tpkg

300

260

℃

℃

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE: 1. TJ = 25oC to 150℃

Symbol

RFP70N06 high power mosfet transistors Power Mosfet Transistor N-Channel Power MOSFETs

Packaging

RFP70N06 high power mosfet transistors Power Mosfet Transistor N-Channel Power MOSFETs

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Product tags

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n channel power mosfet

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pnp power transistor list
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RFP70N06 high power mosfet transistors Power Mosfet Transistor N-Channel Power MOSFETs

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Product Detail
Brand Name :
Anterwell
Model Number :
RFP70N06
Certification :
new & original
Place of Origin :
original factory
MOQ :
10pcs
Price :
Negotiate
Contact Supplier
RFP70N06 high power mosfet transistors Power Mosfet Transistor N-Channel Power MOSFETs

Anterwell Technology Ltd.

Site Member
9 Years
guangdong, shenzhen
Since 2004
Business Type :
Distributor/Wholesaler, Trading Company
Main Products :
Integrated Circuit Chip, Programmable IC Chips, Circuit Board Chips
Total Annual :
500000-1000000
Employee Number :
20~30
Certification Level :
Site Member
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