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FQPF10N20C high power mosfet transistors power mosfet ic Power Mosfet Transistor 200V N-Channel MOSFET
FQPF10N20C high power mosfet transistors power mosfet ic Power Mosfet Transistor 200V N-Channel MOSFET
Specifications
Brand Name :
Anterwell
Model Number :
FQPF10N20C
Certification :
new & original
Place of Origin :
original factory
MOQ :
10pcs
Price :
Negotiate
Payment Terms :
T/T, Western Union, Paypal
Supply Ability :
7800pcs
Delivery Time :
1 day
Packaging Details :
Please contact me for details
Drain-Source Voltage :
200 V
Gate-Source Voltage :
± 30 V
Single Pulsed Avalanche Energy :
210 mJ
Avalanche Current :
9.5 A
Repetitive Avalanche Energy :
7.2 mJ
Operating and Storage Temperature Range :
-55 to +150 °C
Description


FQP10N20C/FQPF10N20C
200V N-Channel MOSFET

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.

Features
• 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V
• Low gate charge ( typical 20 nC)
• Low Crss ( typical 40.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQPF10N20C high power mosfet transistors power mosfet ic Power Mosfet Transistor 200V N-Channel MOSFET
Absolute Maximum Ratings TC = 25°C unless otherwise noted

SymbolParameterFQP10N20CFQPF10N20CUnits
VDSSDrain-Source Voltage200V
ID

Drain Current - Continuous (TC = 25°C)

- Continuous (TC = 100°C)

9.59.5 *A
6.06.0 *A
IDMDrain Current - Pulsed (Note 1)3838 *A
VGSSGate-Source Voltage± 30V
EASSingle Pulsed Avalanche Energy (Note 2)210mJ
IARAvalanche Current (Note 1)9.5A
EARRepetitive Avalanche Energy (Note 1)7.2mJ
dv/dtPeak Diode Recovery dv/dt (Note 3)5.5V/ns
PD

Power Dissipation (TC = 25°C)

- Derate above 25°C

7238W
0.570.3W/°C
TJ, TSTGOperating and Storage Temperature Range-55 to +150°C
TLMaximum lead temperature for soldering purposes, 1/8" from case for 5 seconds300°C

* Drain current limited by maximum junction temperature.

Package Dimensions

TO-220
FQPF10N20C high power mosfet transistors power mosfet ic Power Mosfet Transistor 200V N-Channel MOSFET

TO-220F
FQPF10N20C high power mosfet transistors power mosfet ic Power Mosfet Transistor 200V N-Channel MOSFET


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Product tags

power mosfet ic

,

p55nfo power mosfet

,

n channel power mosfet
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FQPF10N20C high power mosfet transistors power mosfet ic Power Mosfet Transistor 200V N-Channel MOSFET

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Product Detail
Brand Name :
Anterwell
Model Number :
FQPF10N20C
Certification :
new & original
Place of Origin :
original factory
MOQ :
10pcs
Price :
Negotiate
Contact Supplier
FQPF10N20C high power mosfet transistors power mosfet ic Power Mosfet Transistor 200V N-Channel MOSFET

Anterwell Technology Ltd.

Site Member
9 Years
guangdong, shenzhen
Since 2004
Business Type :
Distributor/Wholesaler, Trading Company
Main Products :
Integrated Circuit Chip, Programmable IC Chips, Circuit Board Chips
Total Annual :
500000-1000000
Employee Number :
20~30
Certification Level :
Site Member
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