Signal Power Mosfet Transistor P Channel Enhancement Mode BSP315 SIPMOS
• P channel
• Enhancement mode
• Logic Level
• VGS(th) = -0.8...-2.0 V
Drain-source breakdown voltage V(BR)DSS = ƒ(Tj )
Transient thermal impedance Zth JA = ƒ(tp) parameter: D = tp / T
Maximum Ratings
Parameter | Symbol | Values | Unit |
Drain source voltage | VDS | -50 | V |
Drain-gate voltage RGS = 20 kΩ | VDGR | -50 | |
Gate source voltage | VGS | ± 20 | |
Continuous drain current TA = 39 °C | ID | -1.1 | A |
DC drain current, pulsed TA = 25 °C | IDpuls | -4.4 | |
Power dissipation TA = 25 °C | Ptot | 1.8 | W |