MHL18336 PCS BAND RF LINEAR LDMOS AMPLIFIER
Designed for ultra–linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems, such as TDMA and CDMA.
• Third Order Intercept: 46 dBm Typ
• Power Gain: 30 dB Typ (@ f =1850 MHz)
• Excellent Phase Linearity and Group Delay Characteristics
• Ideal for Feedforward Base Station Applications
Rating | Symbol | Value | Unit |
DC Supply Voltage | VDD | 30 | Vdc |
RF Input Power | Pin | +10 | dBm |
Storage Temperature Range | Tstg | –40 to +100 | °C |
ELECTRICAL CHARACTERISTICS (VDD = 26 Vdc, TC = 25°C; 50 Ω System)
Characteristic | Symbol | Min | Typ | Max | Unit |
Supply Current | IDD | — | 500 | 525 | |
Power Gain (f =1850 MHz) | Gp | 29 | 30 | 31 | dB |
Gain Flatness (f = 1800–1900 MHz) | GF | — | 0.2 | 0.4 | dB |
Power Output @ 1 dB Comp. (f = 1850 MHz) | Pout 1 dB | 35 | 36 | — | dBm |
Input VSWR (f = 1800–1900 MHz) | VSWRin | — | 1.2:1 | 1.5:1 | |
Third Order Intercept (f1 = 1847 MHz, f2 = 1852 MHz) | ITO | 45 | 46 | — | dBm |
Noise Figure (f = 1850 MHz) | NF | — | 4.2 | 4.5 | dB |