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NDS9952A Power Mosfet Transistor Dual N & P-Channel Field Effect Transistor
NDS9952A Power Mosfet Transistor Dual N & P-Channel Field Effect Transistor
Specifications
Brand Name :
Anterwell
Model Number :
NDS9952A
Certification :
new & original
Place of Origin :
original factory
MOQ :
20pcs
Price :
Negotiate
Payment Terms :
T/T, Western Union, Paypal
Supply Ability :
9200pcs
Delivery Time :
1 day
Packaging Details :
Please contact me for details
Drain-Source Voltage :
30 or -30 V
Gate-Source Voltage :
± 20 V
Power Dissipation for Dual Operation :
2 W
Operating and Storage Temperature :
-55 to 150 °C
Thermal Resistance, Junction-to-Ambient :
78 °C/W
Thermal Resistance, Junction-to-Case :
40 °C/W
Description

NDS9952A

Dual N & P-Channel Enhancement Mode Field Effect Transistor

General Description

These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Features

  • N-Channel 3.7A, 30V, RDS(ON)=0.08W @ VGS=10V.
  • P-Channel -2.9A, -30V, RDS(ON)=0.13W @ VGS=-10V.
  • High density cell design or extremely low RDS(ON).
  • High power and current handling capability in a widely used surface mount package.
  • Dual (N & P-Channel) MOSFET in surface mount package.

Absolute Maximum Ratings TA= 25°C unless otherwise noted

Symbol Parameter N-Channel P-Channel Units
VDSS Drain-Source Voltage 30 -30 V
VGSS Gate-Source Voltage ± 20 ± 20 V
ID

Drain Current - Continuous (Note 1a)

- Pulsed

 ± 3.7 ± 2.9 A
± 15 ± 150
PD Power Dissipation for Dual Operation 2 W

Power Dissipation for Single Operation (Note 1a)

(Note 1b)

(Note 1c)

 1.6
1
0.9
TJ ,TSTG Operating and Storage Temperature Range -55 to 150 °C

Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

NDS9952A Power Mosfet Transistor Dual N & P-Channel Field Effect Transistor

Typical RθJA for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:

a. 78℃/W when mounted on a 0.5 in2 pad of 2oz cpper.

b. 125℃/W when mounted on a 0.02 in2 pad of 2oz cpper.

c. 135℃/W when mounted on a 0.003 in2 pad of 2oz cpper.

NDS9952A Power Mosfet Transistor Dual N & P-Channel Field Effect Transistor

Scale 1 : 1 on letter size paper

NDS9952A Power Mosfet Transistor Dual N & P-Channel Field Effect Transistor

Stock Offer (Hot Sell)

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Product tags

p-channel mosfet sot-23

,

dual channel mosfet

,

p channel power mosfet
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NDS9952A Power Mosfet Transistor Dual N & P-Channel Field Effect Transistor

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Product Detail
Brand Name :
Anterwell
Model Number :
NDS9952A
Certification :
new & original
Place of Origin :
original factory
MOQ :
20pcs
Price :
Negotiate
Contact Supplier
NDS9952A Power Mosfet Transistor Dual N & P-Channel Field Effect Transistor

Anterwell Technology Ltd.

Site Member
9 Years
guangdong, shenzhen
Since 2004
Business Type :
Distributor/Wholesaler, Trading Company
Main Products :
Integrated Circuit Chip, Programmable IC Chips, Circuit Board Chips
Total Annual :
500000-1000000
Employee Number :
20~30
Certification Level :
Site Member
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