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IRFD120 Power Mosfet Transistor electrical ic N-Channel Power MOSFET
IRFD120 Power Mosfet Transistor electrical ic N-Channel Power MOSFET
Specifications
Brand Name :
Anterwell
Model Number :
IRFD120
Certification :
new & original
Place of Origin :
original factory
MOQ :
10pcs
Price :
Negotiate
Payment Terms :
T/T, Western Union, Paypal
Supply Ability :
8500pcs
Delivery Time :
1 day
Packaging Details :
Please contact me for details
Drain to Source Breakdown Voltage :
100 V
Drain to Gate Voltage :
100 V
Continuous Drain Current :
1.3 A
Pulsed Drain Current :
5.2 A
Maximum Power Dissipation :
1.0 W
Operating and Storage Temperature :
-55 to 150 ℃
Description

IRFD120

1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.

Formerly developmental type TA17401.

Features

• 1.3A, 100V

• rDS(ON) = 0.300Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Absolute Maximum Ratings TC = 25℃, Unless Otherwise Specified

PARAMETER SYMBOL IRFD120 UNITS
Drain to Source Breakdown Voltage (Note 1) VDS 100 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) VDGR 100 V
Continuous Drain Current ID 1.3 A
Pulsed Drain Current IDM 5.2 A
Gate to Source Voltage VGS ±20 V
Maximum Power Dissipation PD 1.0 W
Linear Derating Factor (See Figure 1) 0.008 W/℃
Single Pulse Avalanche Energy Rating (Note 3) EAS 36 mJ
Operating and Storage Temperature TJ, TSTG -55 to 150 ℃

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s

Package Body for 10s, See Techbrief 334

TL

Tpkg

300

260

℃

℃

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. TJ = 25℃ to 125℃.

3. VDD = 25V, starting TJ = 25℃, L = 32mH, RG = 25Ω, peak IAS = 1.3A.

IRFD120 Power Mosfet Transistor electrical ic N-Channel Power MOSFET

IRFD120 Power Mosfet Transistor electrical ic N-Channel Power MOSFET

Packaging

IRFD120 Power Mosfet Transistor electrical ic N-Channel Power MOSFET

Stock Offer (Hot Sell)

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Product tags

irf power mosfet

,

n channel power mosfet

,

ir power mosfet
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IRFD120 Power Mosfet Transistor electrical ic N-Channel Power MOSFET

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Product Detail
Brand Name :
Anterwell
Model Number :
IRFD120
Certification :
new & original
Place of Origin :
original factory
MOQ :
10pcs
Price :
Negotiate
Contact Supplier
IRFD120 Power Mosfet Transistor electrical ic N-Channel Power MOSFET

Anterwell Technology Ltd.

Site Member
9 Years
guangdong, shenzhen
Since 2004
Business Type :
Distributor/Wholesaler, Trading Company
Main Products :
Integrated Circuit Chip, Programmable IC Chips, Circuit Board Chips
Total Annual :
500000-1000000
Employee Number :
20~30
Certification Level :
Site Member
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