Specifications
Brand Name :
Anterwell
Model Number :
2SC3356-T1B
Certification :
new & original
Place of Origin :
original factory
MOQ :
20pcs
Price :
Negotiate
Payment Terms :
T/T, Western Union, Paypal
Supply Ability :
9000pcs
Delivery Time :
1 day
Packaging Details :
Please contact me for details
Collector to Base Voltage :
20 V
Collector to Emitter Voltage :
12 V
Emitter to Base Voltage :
3.0 V
Collector Current :
100 mA
Total Power Dissipation :
200 mW
Junction Temperature :
150 °C
Description

2SC3356- T1B NPN Silicon RF Power Mosfet Transistor 100 mA Collector Current

FEATURES

• Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz

• High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 3.0 V
Collector Current IC 100 mA
Total Power Dissipation Ptot Note 200 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg −65 to +150 °C

Note Free air

PACKAGE DIMENSIONS

3-PIN MINIMOLD (UNIT: mm)

2SC3356- T1B NPN Silicon RF Power Mosfet Transistor 100 mA Collector Current

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

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2SC3356- T1B NPN Silicon RF Power Mosfet Transistor 100 mA Collector Current

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Brand Name :
Anterwell
Model Number :
2SC3356-T1B
Certification :
new & original
Place of Origin :
original factory
MOQ :
20pcs
Price :
Negotiate
Contact Supplier
2SC3356- T1B NPN Silicon RF Power Mosfet Transistor 100 mA Collector Current

Anterwell Technology Ltd.

Site Member
9 Years
guangdong, shenzhen
Since 2004
Business Type :
Distributor/Wholesaler, Trading Company
Total Annual :
500000-1000000
Employee Number :
20~30
Certification Level :
Site Member
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