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GP4068D Power Mosfet Transistor INSULATED GATE BIPOLAR TRANSISTOR
GP4068D Power Mosfet Transistor INSULATED GATE BIPOLAR TRANSISTOR
Specifications
Brand Name :
Anterwell
Model Number :
GP4068D
Certification :
new & original
Place of Origin :
original factory
MOQ :
20pcs
Price :
Negotiate
Payment Terms :
T/T, Western Union, Paypal
Supply Ability :
8700pcs
Delivery Time :
1 day
Packaging Details :
Please contact me for details
Collector-to-Emitter Voltage :
600 V
Continuous Collector Current :
96 A
Pulse Collector Current :
192 A
Maximum Power Dissipation :
330 W
Operating Junction Temperature :
-55 to +175°C
Storage Temperature :
-55 to +175°C
Description

IRGP4068DPbF

IRGP4068D-EPbF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS

Features

• Low VCE (ON) Trench IGBT Technology

• Low Switching Losses

• Maximum Junction temperature 175 °C

• 5 µS short circuit SOA

• Square RBSOA

• 100% of the parts tested for 4X rated current (ILM)

• Positive VCE (ON) Temperature co-efficient

• Ultra-low VF Hyperfast Diode

• Tight parameter distribution

• Lead Free Package

Benefits

• Device optimized for induction heating and soft switching applications

• High Efficiency due to Low VCE(on), Low Switching Losses and Ultra-low VF

• Rugged transient Performance for increased reliability

• Excellent Current sharing in parallel operation

• Low EMI

Absolute Maximum Ratings

Parameter Max Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 96 A
IC @ TC = 100°C Continuous Collector Current 48 A
ICM Pulse Collector Current 192 A
ILM Clamped Inductive Load Current 192 A
IF @ TC = 160°C Diode Continous Forward Current 8.0 A
IFSM Diode Non Repetitive Peak Surge Current @ TJ = 25°C  175 A
IFM Diode Peak Repetitive Forward Current 16 A
VGE Continuous Gate-to-Emitter Voltage ±20 V
Transient Gate-to-Emitter Voltage ±30 V
PD @ TC = 25°C Maximum Power Dissipation 330 W
PD @ TC = 100°C Maximum Power Dissipation 170 W

TJ

TSTG

 Operating Junction and Storage Temperature Range -55 to +175 °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) °C
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)

GP4068D Power Mosfet Transistor INSULATED GATE BIPOLAR TRANSISTOR

GP4068D Power Mosfet Transistor INSULATED GATE BIPOLAR TRANSISTOR

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Product tags

insulated gate bipolar transistor

,

insulated gate bipolar transistor igbt

,

p enhancement mosfet model
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GP4068D Power Mosfet Transistor INSULATED GATE BIPOLAR TRANSISTOR

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Product Detail
Brand Name :
Anterwell
Model Number :
GP4068D
Certification :
new & original
Place of Origin :
original factory
MOQ :
20pcs
Price :
Negotiate
Contact Supplier
GP4068D Power Mosfet Transistor INSULATED GATE BIPOLAR TRANSISTOR

Anterwell Technology Ltd.

Site Member
9 Years
guangdong, shenzhen
Since 2004
Business Type :
Distributor/Wholesaler, Trading Company
Main Products :
Integrated Circuit Chip, Programmable IC Chips, Circuit Board Chips
Total Annual :
500000-1000000
Employee Number :
20~30
Certification Level :
Site Member
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