FEATURES
• Package type: leaded
• Package form: T-1, clear epoxy
• Dimensions: Ø 3 mm
• Peak wavelength: λp = 940 nm
• High speed • High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 22°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching to Si photodetectors
• Lead (Pb)-free component
• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC
ABSOLUTE MAXIMUM RATINGS
PARAMETER | TEST CONDITION | SYMBOL | VALUE | UNIT |
Reverse voltage | VR | 5 | V | |
Forward current | IF | 100 | mA | |
Peak forward current | tp/T = 0.1, tp = 100 µs | IFM | 1.0 | A |
Surge forward current | tp = 100 µs | IFSM | 1.5 | A |
Power dissipation | PV | 160 | mW | |
Junction temperature | Tj | 100 | °C |
High Speed Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs, DDH
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