- Very low switching losses.
- Overload operation up to T<sub>vj</sub> = 200°C.
- Short-circuit withstand time of 2 µs.
- Robust body diode for hard commutation.
- XT interconnection technology for enhanced thermal performance.
The IMZC120R012M2H is a 1200 V, 12 mΩ N-channel silicon carbide (SiC) MOSFET from Infineon Technologies, designed for high-efficiency and high-power-density applications.