Specifications
Brand Name :
Infineon Technologies
Model Number :
IMZC120R012M2HXKSA1
Manufacturer :
Infineon Technologies
Description :
IMZC120R012M2HXKSA1
Supplier Device Package :
PG-TO247-4-17
Series :
CoolSiC™
FET Type :
N-Channel
Technology :
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) :
1200 V
Current - Continuous Drain (Id) @ 25°C :
129A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
15V, 18V
Rds On (Max) @ Id, Vgs :
12mOhm @ 57A, 18V
Vgs(th) (Max) @ Id :
5.1V @ 17.8mA
Gate Charge (Qg) (Max) @ Vgs :
124 nC @ 18 V
Vgs (Max) :
+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds :
4050 pF @ 800 V
Power Dissipation (Max) :
480W (Tc)
Description

IMZC120R012M2HXKSA1-Datasheet

Typical Applications

- Very low switching losses.


- Overload operation up to T<sub>vj</sub> = 200°C.


- Short-circuit withstand time of 2 µs.


- Robust body diode for hard commutation.


- XT interconnection technology for enhanced thermal performance.

The IMZC120R012M2H is a 1200 V, 12 mΩ N-channel silicon carbide (SiC) MOSFET from Infineon Technologies, designed for high-efficiency and high-power-density applications.

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IMZC120R012M2HXKSA1

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Brand Name :
Infineon Technologies
Model Number :
IMZC120R012M2HXKSA1
Manufacturer :
Infineon Technologies
Description :
IMZC120R012M2HXKSA1
Supplier Device Package :
PG-TO247-4-17
Series :
CoolSiC™
Contact Supplier
IMZC120R012M2HXKSA1

Shikun Electronics Co., Ltd

Verified Supplier
2 Years
guangdong, shenzhen
Since 2007
Business Type :
Manufacturer
Total Annual :
11-22
Employee Number :
11~55
Certification Level :
Verified Supplier
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