EU RoHS |
Compliant |
ECCN (US) |
EAR99 |
Part Status |
Active |
SVHC |
Yes |
Automotive |
No |
PPAP |
No |
Product Category |
Power MOSFET |
Configuration |
Dual |
Process Technology |
NexFET |
Channel Mode |
Enhancement |
Channel Type |
P |
Number of Elements per Chip |
2 |
Maximum Gate Source Voltage (V) |
-6 |
Maximum Gate Threshold Voltage (V) |
1.1 |
Maximum Continuous Drain Current (A) |
3.9 |
Maximum Gate Source Leakage Current (nA) |
100 |
Maximum IDSS (uA) |
1 |
Maximum Drain Source Resistance (MOhm) |
54@4.5V |
Typical Gate Charge @ Vgs (nC) |
2.9 |
Typical Input Capacitance @ Vds (pF) |
458 |
Maximum Power Dissipation (mW) |
700 |
Typical Fall Time (ns) |
16 |
Typical Rise Time (ns) |
8.6 |
Typical Turn-Off Delay Time (ns) |
32.1 |
Typical Turn-On Delay Time (ns) |
12.8 |
Minimum Operating Temperature (°C) |
-55 |
Maximum Operating Temperature (°C) |
150 |
Packaging |
Tape and Reel |
Supplier Package |
DSBGA |
Pin Count |
9 |
Standard Package Name |
BGA |
Mounting |
Surface Mount |
Package Height |
0.28(Max) |
Package Length |
1.5 |
Package Width |
1.5 |
PCB changed |
9 |
Lead Shape |
Ball |