BSS138LT1G ONsemi Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R
The ON Semiconductor MOSFET is an N channel MOSFET transistor which operates in enhancement mode. Its maximum power dissipation is 225 mW. The maximum Drain Source Voltage of the product is 50 V and Gate Source Voltage is ±20 V. This MOSFET has an operating temperature range of -55°C to 150°C.
Features and Benefits:
• Low Threshold Voltage (VGS(th): 0.85 V-1.5 V) Makes it Ideal for Low Voltage Applications
• Miniature SOT-23 Surface Mount Package Saves Board Space
• BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
Application:
• DC-DC converters
• Power management in portable and battery-powered products such as computers
• Printers
• PCMCIA cards
• Cellular and cordless telephones.
Product Technical Specifications
EU RoHS |
Compliant |
ECCN (US) |
EAR99 |
Part Status |
Active |
HTS |
8541.21.00.95 |
Automotive |
No |
PPAP |
No |
Product Category |
Power MOSFET |
Configuration |
Single |
Channel Mode |
Enhancement |
Channel Type |
N |
Number of Elements per Chip |
1 |
Maximum Drain Source Voltage (V) |
50 |
Maximum Gate Source Voltage (V) |
±20 |
Maximum Gate Threshold Voltage (V) |
1.5 |
Operating Junction Temperature (°C) |
-55 to 150 |
Maximum Continuous Drain Current (A) |
0.2 |
Maximum Gate Source Leakage Current (nA) |
100 |
Maximum IDSS (uA) |
0.5 |
Maximum Drain Source Resistance (MOhm) |
3500@5V |
Typical Input Capacitance @ Vds (pF) |
40@25V |
Typical Reverse Transfer Capacitance @ Vds (pF) |
3.5 |
Minimum Gate Threshold Voltage (V) |
0.85 |
Typical Output Capacitance (pF) |
12 |
Maximum Power Dissipation (mW) |
225 |
Typical Turn-Off Delay Time (ns) |
20(Max) |
Typical Turn-On Delay Time (ns) |
20(Max) |
Minimum Operating Temperature (°C) |
-55 |
Maximum Operating Temperature (°C) |
150 |
Packaging |
Tape and Reel |
Maximum Positive Gate Source Voltage (V) |
20 |
Maximum Pulsed Drain Current @ TC=25°C (A) |
0.8 |
Typical Gate Plateau Voltage (V) |
1.9 |
Pin Count |
3 |
Standard Package Name |
SOT |
Supplier Package |
SOT-23 |
Mounting |
Surface Mount |
Package Height |
0.94 |
Package Length |
2.9 |
Package Width |
1.3 |
PCB changed |
3 |
Lead Shape |
Gull-wing |
Amplify electronic signals and switch between them with the help of ON Semiconductor's BSS138LT1G power MOSFET. Its maximum power dissipation is 225 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes tmos technology. This N channel MOSFET transistor operates in enhancement mode.