EU RoHS |
Compliant with Exemption |
ECCN (US) |
EAR99 |
Part Status |
Active |
Automotive |
No |
PPAP |
No |
Product Category |
Power MOSFET |
Material |
Si |
Configuration |
Single |
Process Technology |
HEXFET |
Channel Mode |
Enhancement |
Channel Type |
N |
Number of Elements per Chip |
1 |
Maximum Drain Source Voltage (V) |
150 |
Maximum Gate Source Voltage (V) |
±20 |
Maximum Continuous Drain Current (A) |
104 |
Maximum Drain Source Resistance (MOhm) |
11@10V |
Typical Gate Charge @ Vgs (nC) |
77@10V |
Typical Gate Charge @ 10V (nC) |
77 |
Typical Input Capacitance @ Vds (pF) |
5270@50V |
Maximum Power Dissipation (mW) |
380000 |
Typical Fall Time (ns) |
39 |
Typical Rise Time (ns) |
73 |
Typical Turn-Off Delay Time (ns) |
41 |
Typical Turn-On Delay Time (ns) |
18 |
Minimum Operating Temperature (°C) |
-55 |
Maximum Operating Temperature (°C) |
175 |
Packaging |
Tube |
Pin Count |
3 |
Standard Package Name |
TO-220 |
Supplier Package |
TO-220AB |
Mounting |
Through Hole |
Package Height |
9.02(Max) |
Package Length |
10.67(Max) |
Package Width |
4.83(Max) |
PCB changed |
3 |
Tab |
Tab |
Lead Shape |
Through Hole |