EU RoHS |
Compliant |
ECCN (US) |
EAR99 |
Part Status |
Active |
Automotive |
No |
PPAP |
No |
Product Category |
Power MOSFET |
Material |
Si |
Configuration |
Single |
Process Technology |
HEXFET |
Channel Mode |
Enhancement |
Channel Type |
N |
Number of Elements per Chip |
1 |
Maximum Drain Source Voltage (V) |
30 |
Maximum Gate Source Voltage (V) |
±20 |
Maximum Gate Threshold Voltage (V) |
1(Min) |
Maximum Continuous Drain Current (A) |
1.2 |
Maximum Drain Source Resistance (MOhm) |
250@10V |
Typical Gate Charge @ Vgs (nC) |
3.3@10V |
Typical Gate Charge @ 10V (nC) |
3.3 |
Typical Gate to Drain Charge (nC) |
1.1 |
Typical Gate to Source Charge (nC) |
0.48 |
Typical Reverse Recovery Charge (nC) |
22 |
Typical Input Capacitance @ Vds (pF) |
85@25V |
Typical Output Capacitance (pF) |
34 |
Maximum Power Dissipation (mW) |
540 |
Typical Fall Time (ns) |
1.7 |
Typical Rise Time (ns) |
4 |
Typical Turn-Off Delay Time (ns) |
9 |
Typical Turn-On Delay Time (ns) |
3.9 |
Minimum Operating Temperature (°C) |
-55 |
Maximum Operating Temperature (°C) |
150 |
Packaging |
Tape and Reel |
Pin Count |
3 |
Standard Package Name |
SOT |
Supplier Package |
SOT-23 |
Mounting |
Surface Mount |
Package Height |
1.02(Max) |
Package Length |
3.04(Max) |
Package Width |
1.4(Max) |
PCB changed |
3 |
Lead Shape |
Gull-wing |