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Round LaAlO3 Wafer Optical Substrate High Pressure Experimental Phase Double Side Polished
Round LaAlO3 Wafer Optical Substrate High Pressure Experimental Phase Double Side Polished
Round LaAlO3 Wafer Optical Substrate High Pressure Experimental Phase Double Side Polished
Round LaAlO3 Wafer Optical Substrate High Pressure Experimental Phase Double Side Polished
Specifications
Brand Name :
Crystro
Model Number :
CR20200108-8
Certification :
SGS
Place of Origin :
China
MOQ :
1pc
Price :
Negotiable
Payment Terms :
T/T, Western Union, MoneyGram, Paypal
Supply Ability :
1000pcs/month
Delivery Time :
3-4 weeks
Packaging Details :
Carton Package
Orientation :
<100>
Type :
Round,Square
Diameter :
2"inch , 3"inch, 4''inch
Thickness :
0.5mm,1mm
Polishing :
double side polished
Surface finish :
< 10A
Material :
Laalo3
Shape :
Wafer
Description

Round <100> LaAlO3 Wafer Optical Substrate High Pressure Experimental Phase

LaAlO3 is a high temperature superconducting single crystal substrate. It is a good substrate material for epitaxial growth of high temperature superconducting thin films and giant magnetic thin films. Its dielectric properties are suitable for low loss microwave and dielectric resonance applications.

LaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for epitaxial growth of high Tc superconductors, magnetic and ferro-electric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications.

Applications:

Electronic devices, catalysis, high temperature fuel cell, ceramics, sewage treatment, substrate materials

Main Advantages:

Small dielectric constant; low dielectric loss;good lattice matching;small thermal expansion coefficient;good chemical stability;wide energy gap;large specific surface area;certain activity; good thermal stability

Main Properties:

Typical Physical Properties
Crystal Structure Cubic a=3.79 Angstroms
Growth Method Czochralski
Density 6.52 g/cm3
Melt Point 2080 oC
Thermal expansion 10 (x10-6/ oC)
Dielectric Constant ~ 25
Loss Tangent at 10 GHz ~3x10-4 @ 300K , ~0.6 x10-4 @77K
Color and Appearance Transparent to Brown based on annealing condition. Visible twins on polished substrate
Chemical Stability Insoluble in mineral acids at 25 oC and soluble in H3PO3 at> 150 oC
Product tags

sio2 wafer

,

fused silica wafer

,

rhodium plating solution
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Round LaAlO3 Wafer Optical Substrate High Pressure Experimental Phase Double Side Polished

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Product Detail
Brand Name :
Crystro
Model Number :
CR20200108-8
Certification :
SGS
Place of Origin :
China
MOQ :
1pc
Price :
Negotiable
Contact Supplier
video
Round LaAlO3 Wafer Optical Substrate High Pressure Experimental Phase Double Side Polished
Round LaAlO3 Wafer Optical Substrate High Pressure Experimental Phase Double Side Polished

ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.

Verified Supplier
7 Years
Since 2016
Business Type :
Manufacturer, Exporter
Main Products :
Magneto Optical Crystals, Single Crystal Substrates, Piezoelectric Effect Crystals
Total Annual :
5000,000-8000,000
Employee Number :
80~100
Certification Level :
Verified Supplier
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