High Light Emission Efficiencyht yield Gd3Al2Ga3O12:Ce (GAGG:Ce) Crystal Wafer
GAGG(Ce) (Ce:GAGG, Gd3Al2Ga3O12) is new scintillator for single photon emission computed tomography(SPECT), gamma-ray and compton electron detection. Cerium doped GAGG have many properties that make it suitable for gamma spectroscopy and medical imaging applications. A high photon yield and emission peak around 520 nm makes the material well suited to be readout by Silicon Photo-multiplier detectors.
High density
High light yield
Fast decay time
Chemically inert
High sensitivity
High energy resolution
Main Advantages:
Main Applications:
Main Properties:
Chemical Formula | Gd₃Al₂Ga₃O₁₂ |
Atomic Number (Effective) | 54.4 |
Growth Method | Czochralski |
Density | 6.63g/cm3 |
Mohs Hardness | 8 |
Melting Point | 1850℃ |
Thermal Expansion Coeff. | TBA x 10‾⁶ |
Specifications:
Chamfer | <0.2×45° |
Orientation Tolerance | < 0.5° |
Thickness/Diameter Tolerance | ±0.05 mm |
Clear Aperture | >90% |
Wavefront Distortion | dia 70mm |
Surface Quality | 10/5 (Scratch/Dig) |
Parallel | 10″ |
Perpendicular | 5′ |