Specifications
Brand Name :
Infineon
Model Number :
FF200R17KE4HOSA1
Place of Origin :
Germany
MOQ :
1PCS
Price :
Bargain
Payment Terms :
L/C, T/T
Supply Ability :
500 PCS+48hours
Delivery Time :
48hours
Packaging Details :
Tray
Infineon :
FF200R17KE4HOSA1
Configuration :
Dual
Collector-emitter maximum voltage VCEO :
1.7 kV
Collector-emitter saturation voltage :
1.95 V
Continuous collector current at 25C :
310 A
Gate-emitter leakage current :
100 nA
Pd-power dissipation :
1250 W
Minimum working temperature :
-40℃
Maximum working temperature :
+150℃
Packaging :
10 PCS
Description

FF200R17KE4HOSA1 SP000713374 Infineon IGBT Module IGBT Module 200A 1700V High Power

FF200R17KE4

Manufacturer: Infineon
Product Type: IGBT Modules
Configuration: Dual
Collector-emitter maximum voltage VCEO: 1.7 kV
Collector-emitter saturation voltage: 1.95 V
Continuous collector current at 25 C: 310 A
Gate-emitter leakage current: 100 nA
Pd-power dissipation: 1250 W
Package / Box: 62 mm
Minimum working temperature: - 40 C
Maximum working temperature: + 150 C
Package: Tray
Gate/emitter maximum voltage: 20 V
Mounting Style: Chassis Mount
Series: Trenchstop IGBT4 - E4
Packing Quantity: 10 PCS
Subcategory: IGBTs
Technology: Si

200A 1700V High Power IGBT Module / FF200R17KE4HOSA1 SP000713374200A 1700V High Power IGBT Module / FF200R17KE4HOSA1 SP000713374

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200A 1700V High Power IGBT Module / FF200R17KE4HOSA1 SP000713374

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Brand Name :
Infineon
Model Number :
FF200R17KE4HOSA1
Place of Origin :
Germany
MOQ :
1PCS
Price :
Bargain
Payment Terms :
L/C, T/T
Contact Supplier
200A 1700V High Power IGBT Module / FF200R17KE4HOSA1 SP000713374

Eastern Stor International Ltd.

Verified Supplier
2 Years
guangdong, shenzhen
Since 2019
Business Type :
Distributor/Wholesaler, Agent, Importer, Exporter, Trading Company
Total Annual :
20000000-30000000
Employee Number :
50~80
Certification Level :
Verified Supplier
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