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IXYH40N65C3H1
IXYH40N65C3H1
Specifications
Gate-Emitter Leakage Current : :
100 nA
Product Category : :
IGBT Transistors
Mounting Style : :
Through Hole
Continuous Collector Current at 25 C : :
80 A
Pd - Power Dissipation : :
300 W
Collector- Emitter Voltage VCEO Max : :
650 V
Package / Case : :
TO-247-3
Maximum Operating Temperature : :
+ 175 C
Maximum Gate Emitter Voltage : :
30 V
Packaging : :
Tube
Configuration : :
Single
Collector-Emitter Saturation Voltage : :
1.85 V
Manufacturer : :
IXYS
Description
The IXYH40N65C3H1,from IXYS,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product tags

XC9572

,

LE82Q965

,

SC16C554DBIA68
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IXYH40N65C3H1

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Product Detail
Gate-Emitter Leakage Current : :
100 nA
Product Category : :
IGBT Transistors
Mounting Style : :
Through Hole
Continuous Collector Current at 25 C : :
80 A
Pd - Power Dissipation : :
300 W
Collector- Emitter Voltage VCEO Max : :
650 V
Contact Supplier
IXYH40N65C3H1

Beijing Silk Road Enterprise Management Services Co.,LTD

Verified Supplier
2 Years
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer, Exporter, Trading Company
Main Products :
16-bit Microcontrollers - MCU, AC/DC Converters, Analog & Digital Crosspoint ICs
Employee Number :
600~800
Certification Level :
Verified Supplier
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