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STGB30H60DFB
STGB30H60DFB
Specifications
Gate-Emitter Leakage Current : :
+ / - 250 nA
Product Category : :
IGBT Transistors
Mounting Style : :
SMD/SMT
Continuous Collector Current at 25 C : :
60 A
Pd - Power Dissipation : :
260 W
Collector- Emitter Voltage VCEO Max : :
600 V
Package / Case : :
D2PAK-3
Maximum Operating Temperature : :
+ 175 C
Maximum Gate Emitter Voltage : :
+/- 20 V
Packaging : :
Reel
Configuration : :
Single
Collector-Emitter Saturation Voltage : :
1.55 V
Manufacturer : :
STMicroelectronics
Description
The STGB30H60DFB,from STMicroelectronics,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product tags

fr4 gb br6802rx 160

,

GCIXP1200GB

,

3528 rgb
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STGB30H60DFB

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Product Detail
Gate-Emitter Leakage Current : :
+ / - 250 nA
Product Category : :
IGBT Transistors
Mounting Style : :
SMD/SMT
Continuous Collector Current at 25 C : :
60 A
Pd - Power Dissipation : :
260 W
Collector- Emitter Voltage VCEO Max : :
600 V
Contact Supplier
STGB30H60DFB

Beijing Silk Road Enterprise Management Services Co.,LTD

Verified Supplier
2 Years
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer, Exporter, Trading Company
Main Products :
16-bit Microcontrollers - MCU, AC/DC Converters, Analog & Digital Crosspoint ICs
Employee Number :
600~800
Certification Level :
Verified Supplier
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