Specifications
Gate-Emitter Leakage Current : :
100 nA
Product Category : :
IGBT Transistors
Mounting Style : :
Through Hole
Continuous Collector Current at 25 C : :
140 A
Collector- Emitter Voltage VCEO Max : :
900 V
Package / Case : :
TO-247-3
Maximum Operating Temperature : :
+ 175 C
Maximum Gate Emitter Voltage : :
+/- 20 V
Packaging : :
Tube
Configuration : :
Single
Collector-Emitter Saturation Voltage : :
2.7 V
Manufacturer : :
IXYS
Description :
IGBT Transistors 900V 60A 2.7V XPT IGBT GenX3
Description
The IXYH60N90C3,from IXYS,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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IXYH60N90C3

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Gate-Emitter Leakage Current : :
100 nA
Product Category : :
IGBT Transistors
Mounting Style : :
Through Hole
Continuous Collector Current at 25 C : :
140 A
Collector- Emitter Voltage VCEO Max : :
900 V
Package / Case : :
TO-247-3
Contact Supplier
IXYH60N90C3
IXYH60N90C3
IXYH60N90C3

Beijing Silk Road Enterprise Management Services Co.,LTD

Verified Supplier
2 Years
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer, Exporter, Trading Company
Employee Number :
600~800
Certification Level :
Verified Supplier
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