Category :
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Vgs(th) (Max) @ Id :
3.9V @ 680µA
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-220-3
Gate Charge (Qg) (Max) @ Vgs :
85 nC @ 10 V
Rds On (Max) @ Id, Vgs :
450mOhm @ 7.1A, 10V
Drive Voltage (Max Rds On, Min Rds On) :
10V
Drain to Source Voltage (Vdss) :
800 V
Input Capacitance (Ciss) (Max) @ Vds :
1600 pF @ 100 V
Mounting Type :
Through Hole
Supplier Device Package :
PG-TO220-3-1
Mfr :
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C :
11A (Tc)
Power Dissipation (Max) :
156W (Tc)
Technology :
MOSFET (Metal Oxide)
Base Product Number :
SPP11N80
Description :
MOSFET N-CH 800V 11A TO220-3