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1200V Inverter Dual IGBT Half Bridge Module FF200R12KT4 Power Drive 62mm C-Series
1200V Inverter Dual IGBT Half Bridge Module FF200R12KT4 Power Drive 62mm C-Series
Specifications
Brand Name :
Infineon
Model Number :
FF200R12KT4
Place of Origin :
China
MOQ :
1 set
Payment Terms :
T/T
Supply Ability :
1000sets
Delivery Time :
25 days after signing the contract
Packaging Details :
Wooden box packing
VCES :
1200V
IC nom IC :
200A
IC :
320A
ICRM :
400A
Description

half-bridge 62mm C-series 1200 V, inverter dual IGBT modules FF200R12KT4 power drive module

Maximum Rated Values

Collector-emitter voltage Tvj = 25°C VCES 1200 V
Continuous DC collector current TC = 100°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C		 IC nom
IC

200

320

A

A
Repetitive peak collector current tP = 1 ms ICRM 400 A
Total power dissipation

TC = 25°C,

Tvj max = 175°C

 Ptot 1100 W
Gate-emitter peak voltage VGES +/-20 V

Characteristic Values

Collector-emitter saturation voltage

IC = 200 A, VGE = 15 V Tvj = 25°C

IC = 200 A, VGE = 15 V Tvj = 125°C
IC = 200 A, VGE = 15 V Tvj = 150°C

 VCE sat 1,75
2,05
2,10		 2,15 V
VV
Gate threshold voltage IC = 7,60 mA, VCE = VGE, Tvj = 25°C VGEth 5,2 5,8 6,4 V
Gate charge VGE = -15 V ... +15 V QG 1,80 µC
Internal gate resistor Tvj = 25°C RGint 3,8 Ω
Input capacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 14,0 nF
Reverse transfer capacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,50 nF
Collector-emitter cut-off current VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 5,0 mA
Gate-emitter leakage current VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA
Turn-on delay time, inductive load IC = 200 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V Tvj = 125°C
RGon = 2,4 Ω Tvj = 150°C		 td on 0,16 0,17
0,18		 µs
µs
µs
Rise time, inductive load IC = 200 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V Tvj = 125°C
RGon = 2,4 Ω Tvj = 150°C		 tr 0,045 0,04
0,50		 µs
µs
µs
Turn-off delay time, inductive load IC = 200 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V Tvj = 125°C
RGon = 2,4 Ω Tvj = 150°C		 td off 0,45 0,52
0,54		 µs
µs
µs
Fall time, inductive load IC = 200 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V Tvj = 125°C
RGon = 2,4 Ω Tvj = 150°C		 tf 0,10 0,16
0,16		 µs
µs
µs
Turn-on energy loss per pulse IC = 200 A, VCE = 600 V, LS = 30 nH Tvj = 25°C
VGE = ±15 V, di/dt = 4000 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 2,4 Ω Tvj = 150°C		 Eon 10,0
15,0
17,0		 19,0
30,0
36,0
Turn-off energy loss per pulse IC = 200 A, VCE = 600 V, LS = 30 nH Tvj = 25°C
VGE = ±15 V, du/dt = 4500 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 2,4 Ω Tvj = 150°C		 Eoff 14,0
20,0
23,0		 mJ
mJ
mJ
SC data VGE ≤ 15 V, VCC = 900 V
VCEmax = VCES -LsCE ·di/dt tP ≤ 10 µs, Tvj = 150°C		 ISC 800 mJ
mJ
mJ
Thermal resistance, junction to case IGBT / per IGBT RthJC 0,135 K/W
Thermal resistance, caseto heatsink EACH IGBT / per IGBT
λPaste = 1 W/(m·K) / λgrease = 1 W/(m·K)		 RthCH 0,034 K/W
Temperature under switching conditions Tvj op -40 150

°C

1200V Inverter Dual IGBT Half Bridge Module FF200R12KT4 Power Drive 62mm C-Series

1200V Inverter Dual IGBT Half Bridge Module FF200R12KT4 Power Drive 62mm C-Series
Product tags

igbt driver circuit for inverter

,

inverter igbt

,

igbt inverter
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1200V Inverter Dual IGBT Half Bridge Module FF200R12KT4 Power Drive 62mm C-Series

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Product Detail
Brand Name :
Infineon
Model Number :
FF200R12KT4
Place of Origin :
China
MOQ :
1 set
Payment Terms :
T/T
Supply Ability :
1000sets
Contact Supplier
1200V Inverter Dual IGBT Half Bridge Module FF200R12KT4 Power Drive 62mm C-Series

Hontai Machinery and equipment (HK) Co. ltd

Verified Supplier
14 Years
guangdong, shenzhen
Since 2000
Business Type :
Exporter, Trading Company, Seller
Main Products :
Electric Valve Actuator, Power Station Valve, Electronic Control Relay
Total Annual :
3 Million-4 Million
Certification Level :
Verified Supplier
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