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Infineon IGBT Power Module FF50R12RT4 34mm 1200V Dual IGBT With Fast Trench / Fieldstop
Infineon IGBT Power Module FF50R12RT4 34mm 1200V Dual IGBT With Fast Trench / Fieldstop
Specifications
Brand Name :
Infineon
Model Number :
FF50R12RT4
Place of Origin :
China
MOQ :
1 set
Payment Terms :
T/T
Supply Ability :
1000sets
Delivery Time :
25 days after signing the contract
Packaging Details :
Wooden box packing
VCES :
1200V
IC nom :
50A
ICRM :
100A
Applications :
Motor Drives
Electrical Features :
Low Switching Losses
Description

Infineon FF50R12RT4 well-known 34 mm 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled


Typical Applications

• High Power Converters

• Motor Drives

• UPS Systems

Electrical Features

• Extended Operation Temperature Tvj op

• Low Switching Losses

• Low VCEsat

• Tvj op = 150°C

• VCEsat with positive Temperature Coefficient

Mechanical Features

• Isolated Base Plate

• Standard Housing

IGBT,Inverter

Maximum Rated Values

Collector-emitter voltage Tvj = 25°C VCES 1200 V
Continuous DC collector current TC = 100°C, Tvj max = 175°C IC nom 50 A
Repetitive peak collector current tP = 1 ms ICRM 100 A
Total power dissipation TC = 25°C, Tvj max = 175°C Ptot 285 W
Gate-emitter peak voltage VGES +/-20 V

Characteristic Values

Collector-emitter saturation voltage IC = 50 A, VGE = 15 V Tvj = 25°C
IC = 50 A, VGE = 15 V Tvj = 125°C
IC = 50 A, VGE = 15 V Tvj = 150°C		 VCE sat 1,85
2,15
2,25		 2,15 V
VV
Gate threshold voltage IC = 1,60 mA, VCE = VGE, Tvj = 25°C VGEth 5,2 5,8 6,4 V
Gate charge VGE = -15 V ... +15 V QG 0,38 µC
Internal gate resistor Tvj = 25°C RGint 4,0 Ω
Input capacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 2,80 nF
Reverse transfer capacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,10 nF
Collector-emitter cut-off current VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 1.0 mA
Gate-emitter leakage current VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 100 nA
Turn-on delay time, inductive load IC = 50 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V Tvj = 125°C
RGon = 15 Ω Tvj = 150°C		 td on 0,13 0,15
0,15		 µs
µs
µs
Rise time, inductive load IC = 50 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V Tvj = 125°C
RGon = 15 Ω Tvj = 150°C		 tr 0,02 0,03
0,035		 µs
µs
µs
Turn-off delay time, inductive load IC = 50 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V Tvj = 125°C
RGoff = 15 Ω Tvj = 150°C		 td off 0,30 0,38
0,40		 µs
µs
µs
Fall time, inductive load IC = 50 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V Tvj = 125°C
RGoff = 15 Ω Tvj = 150°C		 tf 0,045 0,08
0,09		 µs
µs
µs
Turn-on energy loss per pulse IC = 50 A, VCE = 600 V, LS = 30 nH Tvj = 25°C
VGE = ±15 V, di/dt = 1300 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 15 Ω Tvj = 150°C		 Eon 4,50
6,50
7,50		 19,0
30,0
36,0
Turn-off energy loss per pulse IC = 50 A, VCE = 600 V, LS = 30 nH Tvj = 25°C
VGE = ±15 V, du/dt = 3800 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 15 Ω Tvj = 150°C		 Eoff 2,50
4,00
4,50		 mJ
mJ
mJ
SC data VGE ≤ 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt tP ≤ 10 µs, Tvj = 150°C		 ISC 180 mJ
mJ
mJ
Thermal resistance, junction to case IGBT / per IGBT RthJC 0,53 K/W
Thermal resistance, caseto heatsink EACH IGBT / per IGBT
λPaste = 1 W/(m·K) / λgrease = 1 W/(m·K)		 RthCH 0,082 K/W
Temperature under switching conditions Tvj op -40 150 °C

Product tags

high power igbt module

,

power module igbt

,

high current igbt
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Infineon IGBT Power Module FF50R12RT4 34mm 1200V Dual IGBT With Fast Trench / Fieldstop

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Product Detail
Brand Name :
Infineon
Model Number :
FF50R12RT4
Place of Origin :
China
MOQ :
1 set
Payment Terms :
T/T
Supply Ability :
1000sets
Contact Supplier
Infineon IGBT Power Module FF50R12RT4 34mm 1200V Dual IGBT With Fast Trench / Fieldstop

Hontai Machinery and equipment (HK) Co. ltd

Verified Supplier
14 Years
guangdong, shenzhen
Since 2000
Business Type :
Exporter, Trading Company, Seller
Main Products :
Electric Valve Actuator, Power Station Valve, Electronic Control Relay
Total Annual :
3 Million-4 Million
Certification Level :
Verified Supplier
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