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Infineon Automotive IGBT Module , High Power IGBT Module Converters FF1200R12IE5
Infineon Automotive IGBT Module , High Power IGBT Module Converters FF1200R12IE5
Specifications
Brand Name :
Infineon
Model Number :
FF1200R12IE5
Place of Origin :
China
MOQ :
1 set
Payment Terms :
T/T
Supply Ability :
1000sets
Delivery Time :
25 days after signing the contract
Packaging Details :
Wooden box packing
VCES :
1200V
IC nom :
1200A
ICRM :
2400A
Description

Infineon Technologies Automotive IGBT Modules High power converters FF1200R12IE5 Motor drives

Typical Applications
• High power converters
• Motor drives
• UPS systems


Electrical Features
• Extended operating temperature Tvj op
• High short-circuit capability
• Unbeatable robustness
• Tvj op = 175°C
• Trench IGBT 5

Mechanical Features
• Package with CTI>400
• High power density
• High power and thermal cycling capability
• High creepage and clearance distances

IGBT Inverter
Maximum Rated Values

Collector-emitter voltage Tvj = 25°C VCES 1200 V
Continuous DC collector current TC = 80°C, Tvj max = 175°C IC nom 1200 A
Repetitive peak collector current tP = 1 ms ICRM 2400 A
Gate-emitter peak voltage VGES +/-20 V

Characteristic Values min. typ. max.

Collector-emitter saturation voltage

IC = 1200 A, VGE = 15 V Tvj = 25°C

IC = 1200 A, VGE = 15 V Tvj = 125°C

IC = 1200 A, VGE = 15 V Tvj = 175°C

 VCE sat

1,70

2,00

2,15

2,15

2,45

2,60

 VVV
Gate threshold voltage IC = 33,0 mA, VCE = VGE, Tvj = 25°C VGEth 5,25 5,80 6,35 V
Gate charge VGE = -15 V ... +15 V, VCE = 600V QG 5,75 µC
Internal gate resistor Tvj = 25°C RGint 0,75 Ω
Input capacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 65,5 nF
Reverse transfer capacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 2,60 nF
Collector-emitter cut-off current VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 5,0 mA
Gate-emitter leakage current VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA
Turn-on delay time, inductive load IC = 1200 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V Tvj = 125°C
RGon = 0,82 Ω Tvj = 175°C		 td on 0,20
0,23
0,25		 µs
µs
µs
Rise time,inductive load IC = 1200 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V Tvj = 125°C
RGon = 0,82 Ω Tvj = 175°C		 tr 0,16
0,17
0,18		 µs
µs
µs
Turn-off delay time, inductive load IC = 1200 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V Tvj = 125°C
RGoff = 0,82 Ω Tvj = 175°C		 td off 0,48
0,52
0,55		 µs
µs
µs
Fall time,inductive load IC = 1200 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V Tvj = 125°C
RGoff = 0,82 Ω Tvj = 175°C		 tf 0,08
0,11
0,13		 µs
µs
µs
Turn-on energy loss per pulse IC = 1200 A, VCE = 600 V, LS = 45 nH Tvj = 25°C
VGE = ±15 V, di/dt = 6000 A/µs (Tvj = 175°C) Tvj = 125°C
RGon = 0,82 Ω Tvj = 175°C		 Eon 80,0
120
160		 mJ
mJ
mJ
Turn-off energy loss per pulse IC = 1200 A, VCE = 600 V, LS = 45 nH Tvj = 25°C
VGE = ±15 V, du/dt = 2800 V/µs (Tvj = 175°C) Tvj = 125°C
RGoff = 0,82 Ω Tvj = 175°C		 Eoff 130
160
180		 mJ
mJ
mJ
SC data VGE ≤ 15 V, VCC = 900 V
VCEmax = VCES -LsCE ·di/dt tP ≤ 10 µs, Tvj = 175°C		 ISC 4000 A
Thermal resistance, junction to case IGBT/per IGBT RthJC 28,7 K/kW
Thermal resistance,case to heat sink IGBT/per IGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)		 RthCH 22,1 K/kW
Temperature under switching conditions Tvj op -40 175 °C

Infineon Automotive IGBT Module , High Power IGBT Module Converters FF1200R12IE5

Product tags

igbt driver circuit for inverter

,

igbt converter

,

infineon igbt module
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Infineon Automotive IGBT Module , High Power IGBT Module Converters FF1200R12IE5

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Product Detail
Brand Name :
Infineon
Model Number :
FF1200R12IE5
Place of Origin :
China
MOQ :
1 set
Payment Terms :
T/T
Supply Ability :
1000sets
Contact Supplier
Infineon Automotive IGBT Module , High Power IGBT Module Converters FF1200R12IE5

Hontai Machinery and equipment (HK) Co. ltd

Verified Supplier
14 Years
guangdong, shenzhen
Since 2000
Business Type :
Exporter, Trading Company, Seller
Main Products :
Electric Valve Actuator, Power Station Valve, Electronic Control Relay
Total Annual :
3 Million-4 Million
Certification Level :
Verified Supplier
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