Specifications
Brand Name :
Infineon
Model Number :
FF1500R12IE5
Place of Origin :
China
MOQ :
1 set
Payment Terms :
T/T
Supply Ability :
1000sets
Delivery Time :
25 days after signing the contract
Packaging Details :
Wooden box packing
VCES :
1200V
IC nom :
1500A
ICRM :
3000A
Applications :
Motor drives
Description

PrimePACK™3+modulewithTrench/FieldstopIGBT5,EmitterControlled5diodeandNTC VCES = 12

Potential Applications
• UPS systems
• High power converters
• Solar applications
• Motor drives

Electrical Features
• Tvj op = 175°C
• Extended operating temperature Tvj op
• Unbeatable robustness
• Trench IGBT 5
• High short-circuit capability

Mechanical Features
• Package with CTI>400
• High power density
• High power and thermal cycling capability
• High creepage and clearance distances

IGBT Inverter
Maximum Rated Values

Collector-emitter voltage Tvj = 25°C VCES 1200 V
Continuous DC collector current TC = 100°C, Tvj max = 175°C IC nom 1500 A
Repetitive peak collector current tP = 1 ms ICRM 3000 A
Gate-emitter peak voltage VGES +/-20 V

Characteristic Values min. typ. max.

Collector-emitter saturation voltage IC = 1500 A, VGE = 15 V
IC = 1500 A, VGE = 15 V
IC = 1500 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
VCE sat 1,70
2,00
2,15
2,15
2,45
2,60
VVV
Gate threshold voltage IC = 41,0 mA, VCE = VGE, Tvj = 25°C VGEth 5,25 5,80 6,35 V
Gate charge VGE = -15 V ... +15 V, VCE = 600V QG 7,15 µC
Internal gate resistor Tvj = 25°C RGint 0,6
Input capacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 82,0 nF
Reverse transfer capacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 3,25 nF
Collector-emitter cut-off current VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 5,0 mA
Gate-emitter leakage current VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA
Turn-on delay time, inductive load IC = 1500 A, VCE = 600 V
VGE = ±15 V
RGon = 0,82 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
td on 0,26
0,28
0,28
µs
µs
µs
Rise time, inductive load IC = 1500 A, VCE = 600 V
VGE = ±15 V
RGon = 0,82 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
tr 0,16
0,17
0,18
µs
µs
µs
Turn-off delay time, inductive load IC = 1500 A, VCE = 600 V
VGE = ±15 V
RGoff = 0,82 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
td off 0,51
0,56
0,59
µs
µs
µs
Fall time, inductive load IC = 1500 A, VCE = 600 V
VGE = ±15 V
RGoff = 0,82 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
tf 0,09
0,11
0,13
µs
µs
µs
Turn-on energy loss per pulse IC = 1500 A, VCE = 600 V, LS = 30 nH
VGE = ±15 V, di/dt = 7900 A/µs (Tvj = 175°C)
RGon = 0,82 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
Eon 120
180
215
mJ
mJ
mJ
Turn-off energy loss per pulse IC = 1500 A, VCE = 600 V, LS = 30 nH
VGE = ±15 V, du/dt = 2750 V/µs (Tvj = 175°C)
RGoff = 0,82 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
Eoff 155
195
220
mJ
mJ
mJ
SC data VGE ≤ 15 V, VCC = 900 V
VCEmax = VCES -LsCE ·di/dt tP ≤ 10 µs, Tvj = 175°C
ISC 5600 A
Thermal resistance, junction to case Each IGBT / per IGBT RthJC 19,5 K/kW
Thermal resistance, case to heatsink each IGBT / per IGBT
λPaste = 1 W/(m·K)/λgrease =1 W/(m·K)
RthCH 12,5 K/kW
Temperature under switching conditions Tvj op -40 175 °C

Automotive IGBT Modul High Power Converters FF1500R12IE5 Active Dual 1500.0 A IGBT5 - E5

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Automotive IGBT Modul High Power Converters FF1500R12IE5 Active Dual 1500.0 A IGBT5 - E5

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Brand Name :
Infineon
Model Number :
FF1500R12IE5
Place of Origin :
China
MOQ :
1 set
Payment Terms :
T/T
Supply Ability :
1000sets
Contact Supplier
Automotive IGBT Modul High Power Converters FF1500R12IE5 Active Dual 1500.0 A IGBT5 - E5

Hontai Machinery and equipment (HK) Co. ltd

Verified Supplier
14 Years
guangdong, shenzhen
Since 2000
Business Type :
Exporter, Trading Company, Seller
Total Annual :
3 Million-4 Million
Certification Level :
Verified Supplier
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