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FDS6699S Transistor MOS Tube MOSFET N CHannel Transistor SOIC-8
FDS6699S Transistor MOS Tube MOSFET N CHannel Transistor SOIC-8
FDS6699S Transistor MOS Tube MOSFET N CHannel Transistor SOIC-8
FDS6699S Transistor MOS Tube MOSFET N CHannel Transistor SOIC-8
FDS6699S Transistor MOS Tube MOSFET N CHannel Transistor SOIC-8
FDS6699S Transistor MOS Tube MOSFET N CHannel Transistor SOIC-8
Specifications
Model Number :
FDS6699S
Place of Origin :
America
Brand Name :
Fairchild
Packaging Details :
Original package
Price :
discussible
MOQ :
discussible
Payment Terms :
L/C, D/A, D/P, D/P, T/T, Western Union, MoneyGram,
Supply Ability :
10000pcs one month
Delivery Time :
3~7days
Type :
MOSFET
D/C :
2021
Package Type :
SOIC-8
Application :
standard
Supplier Type :
Original manufacturer, ODM, Agency, Retailer, Other
Media Available :
datasheet, Photo, EDA/CAD Models, Other
Brand :
Mosfet
Voltage - Collector Emitter Breakdown (Max) :
30.0 V
Operating Temperature :
-55 ℃~150 ℃
Mounting Type :
Surface Mount
Drain to Source Voltage (Vdss) :
30.0 V
Number of Pins :
8
Max Operating Temperature :
150 °C
Element Configuration :
Single
Min Operating Temperature :
-55 °C
Rise Time :
12 ns
Rds On Max :
3.6 mΩ
Number of Channels :
1
RoHS :
Compliant
Description

FDS6699S transistor MOS tube N channel SOIC-8

Products Description :

1. Product Model :FDS6699S

2. Description: MOSFET

3. FDS6699S transistor MOSFET N channel 21 A 30 V 3.6 MoHM 10 V 1.4 V

4. High performance Trench technology for extremely low RDS (ON) and fast switching

5. High power and current handling capability

6. 100% RG (gate resistance) tested

Technological Parameters:

Voltage Rating (DC) 30.0 V
Current Rating 21.0 A
Number of Channels 1
Number of Positions 8
Drain to Source Resistance (on) (Rds) 3.6 mΩ
Polarity N-Channel
Power Dissipation 2.5 mW
Threshold Voltage 1.4 V
Input Capacitance 3.61 nF
Gate Charge 65.0 nC
Drain to Source Voltage (Vds) 30 V
Breakdown Voltage (Drain to Source) 30 V
Breakdown Voltage (Gate to Source) ±20.0 V
Continuous Drain Current (Ids) 21.0 A
Rise Time 12 ns

Application:

Household appliances

The FDS6699S is a SyncFET™ N-channel MOSFET produced using PowerTrench® process. It is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC-to-DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS (ON) and low gate charge. It includes an integrated Schottky diode using Fairchild"s monolithic SyncFET™ technology.

Company Advantages:

Shenzhen Ruizhixinda Electronics Co., LTD.

Is a company with decades of experience in the wholesale agency of electronic components,

We have the power of agency and factory cooperation of various components brands.

Extensive and complete electronic components storage warehouse,

Including rare, rare, unique, and now popular components.

Inventory for 100% Original & New products.

If you need any one, please contact us.

We will provide perfect and high quality products.

Product picture:

FDS6699S Transistor MOS Tube MOSFET N CHannel Transistor SOIC-8

​
Product tags

p-channel mosfet sot-23

,

sot 23 mosfet

,

sot23 mosfet
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FDS6699S Transistor MOS Tube MOSFET N CHannel Transistor SOIC-8

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Product Detail
Model Number :
FDS6699S
Place of Origin :
America
Brand Name :
Fairchild
Packaging Details :
Original package
Price :
discussible
MOQ :
discussible
Contact Supplier
FDS6699S Transistor MOS Tube MOSFET N CHannel Transistor SOIC-8
FDS6699S Transistor MOS Tube MOSFET N CHannel Transistor SOIC-8
FDS6699S Transistor MOS Tube MOSFET N CHannel Transistor SOIC-8

Shenzhen Res Electronics Limited

Verified Supplier
4 Years
guangdong, shenzhen
Since 2000
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer, Exporter, Trading Company, Seller, Other
Main Products :
Electronic IC Chips, IC Memory Chip, Transistor IC Chip
Employee Number :
50~100
Certification Level :
Verified Supplier
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